公开(公告)号：US20150103585A1

公开(公告)日：2015-04-16

申请号：US14051471

申请日：2013-10-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Young-Ran Chuang ,  Chao-Hsien Wu ,  Ming-Shing Chen

IPC: G11C11/412

CPC classification number: G11C11/412 ,  G11C7/04

Abstract: A Static Random Access Memory (SRAM) cell is a latch circuit formed with two inverters each formed with a PMOS transistor and an NMOS transistor. The latch circuit is coupled to a capacitor through a switch. When the switch is switched on, the stability of data stored in the SRAM cell will be enhanced. When the switch is switched off, data can be written to the SRAM cell quickly.

Abstract translation: 静态随机存取存储器（SRAM）单元是形成有两个反相器的锁存电路，每个反相器都形成有PMOS晶体管和NMOS晶体管。 锁存电路通过开关耦合到电容器。 当开关打开时，SRAM单元中存储的数据的稳定性将得到提高。 当开关关闭时，数据可以快速写入SRAM单元。