公开(公告)号：US20240395883A1

公开(公告)日：2024-11-28

申请号：US18210638

申请日：2023-06-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ta-Wei Chiu ,  Ping-Hung Chiang ,  Chia-Ling Wang ,  Wei-Lun Huang ,  Chia-Wen Lu ,  Yueh-Chang Lin

IPC: H01L29/423 ,  H01L21/308 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78

Abstract: A method of manufacturing a semiconductor structure with flush shallow trench isolation and gate oxide, including performing a first etching process to remove a pad oxide layer at one side of a STI and recess the substrate, the first etching process also forms a recess portion not covered by the first etching process and a protruding portion covered by the first etching process on the STI, forming a gate oxide layer on the recessed substrate, performing a second etching process to remove the protruding portion and the pad oxide layer and a first oxide layer on a drain region, performing a third etching process to remove a part of the STI and a second oxide layer, so that a top plane of the STI is flush with the gate oxide layer.

公开(公告)号：US20240243004A1

公开(公告)日：2024-07-18

申请号：US18109225

申请日：2023-02-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Ling Wang ,  Ping-Hung Chiang ,  Ta-Wei Chiu ,  Chia-Wen Lu ,  Wei-Lun Huang ,  Yueh-Chang Lin

IPC: H01L21/762 ,  H01L23/13

CPC classification number: H01L21/76224 ,  H01L23/13

Abstract: A semiconductor structure includes a substrate having a first device region and a second device region in proximity to the first device region. A first trench isolation structure is disposed in the substrate between the first device region and the second device region. The first trench isolation structure includes a first bottom surface within the first device region and a second bottom surface within the second device region. The first bottom surface is lower than the second bottom surface. The first trench isolation structure includes a first top surface within the first device region and a second top surface within the second device region. The first top surface is coplanar with the second top surface.