公开(公告)号：US09553188B1

公开(公告)日：2017-01-24

申请号：US14970549

申请日：2015-12-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Lingzi Li ,  Zhaobing Li ,  Hui Lu ,  Zhang Hu Sun

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40

CPC classification number: H01L29/7835 ,  H01L29/0607 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7816

Abstract: A high-voltage semiconductor device includes a semiconductor substrate, a gate structure, a drain, an insulation structure, and a plurality of conductive structures. The insulation structure is disposed in the semiconductor substrate and disposed between the gate structure and the drain. The insulation structure includes a plurality of insulation units disposed separately from one another. Each of the conductive structures is embedded in one of the insulation units.

Abstract translation: 高压半导体器件包括半导体衬底，栅极结构，漏极，绝缘结构和多个导电结构。 绝缘结构设置在半导体衬底中并且设置在栅极结构和漏极之间。 绝缘结构包括彼此分开设置的多个绝缘单元。 每个导电结构都嵌入绝缘单元之一中。