DOPED SILICON CARBIDE CERAMIC MATRIX COMPOSITE

    公开(公告)号:US20200255351A1

    公开(公告)日:2020-08-13

    申请号:US16785142

    申请日:2020-02-07

    Abstract: A method for forming ceramic matrix composite (CMC) component includes forming a fiber preform, positioning the fiber preform into a chemical vapor infiltration reactor chamber, and densifying the fiber preform. Densification includes infiltrating the fiber preform with a first gas comprising precursors of silicon carbide and infiltrating the fiber preform with a second gas comprising a first rare earth element, wherein the steps of infiltrating the fiber preform with the first gas and infiltrating the fiber preform with the second gas are conducted simultaneously to produce a first rare earth-doped silicon carbide matrix in a first region of the component.

    CVI MATRIX DENSIFICATION PROCESS
    8.
    发明申请

    公开(公告)号:US20210261469A1

    公开(公告)日:2021-08-26

    申请号:US16798016

    申请日:2020-02-21

    Abstract: Disclosed herein is a chemical vapor infiltration method including flowing ceramic precursors through a preform and depositing a matrix material on the preform at a first gas infiltration pressure, increasing the gas filtration pressure to a second gas infiltration pressure, and lowering the gas infiltration pressure to a third gas infiltration pressure which is intermediate to the first and second gas infiltration pressures.

Patent Agency Ranking