公开(公告)号：US3814993A

公开(公告)日：1974-06-04

申请号：US30678672

申请日：1972-11-15

Applicant: US NAVY

Inventor： KENNEDY A

IPC: H01J1/34 ,  H01L15/00

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A tuneable field assisted photocathode structured as a three layer double heterojunction device with a low work function cesium oxide coating on the electron emitting surface. An internal field assistance bias aids the flow of electrons from a narrow bandgap region, where they are photo-generated, to the wider bandgap negative electron affinity surface region for vacuum emission.

Abstract translation: 可调谐的场辅助光电阴极被构造为具有低功函数氧化铯涂层的电子发射表面上的三层双异质结装置。 内部现场辅助偏置有助于将电子从狭窄的带隙区域流出，在那里它们被光生产，到更宽的带隙负电子亲和表面区域用于真空发射。