公开(公告)号：US5371757A

公开(公告)日：1994-12-06

申请号：US147240

申请日：1993-10-22

申请人： Craig C. Largent

发明人： Craig C. Largent

IPC分类号： H01S5/026 ,  H01S5/062 ,  H01S5/50 ,  H01S3/19 ,  H01L15/00

CPC分类号： H01S5/50 ,  H01S5/026 ,  H01S5/06226 ,  H01S5/5018

摘要： A semiconductor master oscillator generates light which seeds a pair of semiconductor power amplifiers which straddle the oscillator. The power amplifiers have slightly misaligned mirror facets which induce substantial resonator losses in the amplifiers and as a result, the amplifier gain is very high and the modulating speed of the oscillator is also very high.

摘要翻译： 半导体主振荡器产生将跨越振荡器的一对半导体功率放大器种子的光。 功率放大器具有稍微不对准的镜面，其在放大器中引起实质的谐振器损耗，结果是放大器增益非常高，并且振荡器的调制速度也非常高。

公开(公告)号：US5335109A

公开(公告)日：1994-08-02

申请号：US022751

申请日：1993-02-19

申请人： Rolf Heidemann

发明人： Rolf Heidemann

IPC分类号： G01J1/44 ,  H01L31/10 ,  H01S3/06 ,  H01S3/067 ,  H01S3/07 ,  H01S3/094 ,  H01S3/131 ,  H04B10/291 ,  H04B10/67 ,  H04B10/02 ,  H04B10/16 ,  H01L15/00

CPC分类号： H04B10/291 ,  H04B10/2912 ,  H04B10/67 ,  H04B10/673 ,  H01S3/06754 ,  H01S3/1301

摘要： An optical amplifier is provided through which an incoming optical signal passes before entering an optical-to-electric transducer. The level of the optical signal output by the optical amplifier is controlled by a controller based on the electrical signal output by the transducer.

摘要翻译： 提供光入射光信号在进入光电换能器之前经过的光放大器。 由光放大器输出的光信号的电平由控制器基于由换能器输出的电信号来控制。

公开(公告)号：US4720642A

公开(公告)日：1988-01-19

申请号：US637405

申请日：1984-08-03

申请人： Alvin M. Marks

发明人： Alvin M. Marks

IPC分类号： H01L31/10 ,  H01L31/101 ,  H01L31/18 ,  H01L33/00 ,  H01L15/00

CPC分类号： H01L33/0004 ,  B82Y10/00 ,  H01L31/101

摘要： A Femto Diode responsive to light frequencies, is described. Quantum principles are utilized. The Femto Diode comprises a submicron metal cylinder with an assymetric metal-insulator-metal tunnel junction at one end and a reflecting potential step at the other end. A light photon having a quanta of energy is absorbed by an electron in the cylinder producing an energetic electron. The cylinder acts as a potential well for the energetic electron, which travels back and forth in its own conduction band without loss of energy until it passes through the junction. The kinetic energy of the energetic electron is converted to electric energy at a greater voltage on the other side of the junction. The energy conversion is reversible.The Femto Diode may be used in light to electric power conversion, a laser which converts electric power to light power, 2D and 3D displays, high speed computers, communications and other devices.

摘要翻译： 描述了响应于光频率的Femto二极管。 使用量子原理。 毫微微二极管包括在一端具有不对称金属 - 绝缘体 - 金属隧道结的亚微米金属圆柱体和另一端的反射电位步骤。 具有能量量的光子被气缸中的电子吸收，产生高能电子。 圆柱体作为能量电子的潜在井，其在其自身的导带中来回前后移动，而不损失能量，直到其通过结。 能量电子的动能在结的另一侧以更大的电压转换为电能。 能量转换是可逆的。 毫微伏二极管可以用于光功率转换，将电力转换为光功率的激光器，2D和3D显示器，高速计算机，通信和其他设备。

公开(公告)号：US3964085A

公开(公告)日：1976-06-15

申请号：US605312

申请日：1975-08-18

申请人： Dawon Kahng ,  Ernest Edward La Bate ,  Martin Paul Lepselter ,  Joseph Raymond Ligenza

发明人： Dawon Kahng ,  Ernest Edward La Bate ,  Martin Paul Lepselter ,  Joseph Raymond Ligenza

IPC分类号： H01L21/8247 ,  G11C16/04 ,  H01L21/28 ,  H01L29/788 ,  H01L29/792 ,  H01L45/00 ,  H01L11/00 ,  H01L15/00 ,  B05D5/12

CPC分类号： H01L21/28282 ,  G11C16/0466 ,  H01L29/792 ,  H01L45/00

摘要： An SI.sub.1 I.sub.2 M (semiconductor-insulator.sub.1 -insulator.sub.2 -metal) memory structure, containing an impurity such as tungsten concentrated in a region including the interface ("I.sub.1 I.sub.2 ") region between the I.sub.1 and I.sub.2 region, is fabricated by depositing an oxide of the impurity, such as tungsten trioxide, on the then exposed, I.sub.1 layer prior to fabricating the I.sub.2 layer. The oxide of the impurity, such as tungsten trioxide, can be advantageously deposited by means of reactive evaporation.

公开(公告)号：US3916429A

公开(公告)日：1975-10-28

申请号：US43328674

申请日：1974-01-14

申请人： PHILIPS CORP

发明人： KOSTELEC JOZE

IPC分类号： H01J29/45 ,  H01L27/00 ,  H01L15/00

CPC分类号： H01J29/455 ,  H01J9/233 ,  H01L27/00 ,  Y10S257/917

摘要： A silicon diode array camera tube employs a p-n junction to perform gating and provide electronic gain control.

摘要翻译： 硅二极管阵列相机管采用p-n结执行门控并提供电子增益控制。

公开(公告)号：US3912923A

公开(公告)日：1975-10-14

申请号：US36946573

申请日：1973-06-13

申请人： HITACHI LTD

发明人： KASANO HIROYUKI

IPC分类号： G05D23/22 ,  H01L21/205 ,  H01L31/074 ,  H01L31/167 ,  H01L33/00 ,  H01L33/30 ,  H01L15/00

CPC分类号： H01L33/30 ,  G05D23/22 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L31/074 ,  H01L31/167 ,  H01L33/0008 ,  H01L33/0066 ,  Y02E10/50

摘要： Light-emitting semiconductor devices consist of a crystal having a Ge concentration of less than 1 ppm and a p-n junction and the method of manufacturing the same. The light-emitting semiconductor device has emission peaks at 1.57 eV in a visible band and can be manufactured inexpensively compared to the conventional light-emitting semiconductor devices.

公开(公告)号：US3889284A

公开(公告)日：1975-06-10

申请号：US43358574

申请日：1974-01-15

申请人： US ARMY

发明人： SCHIEL ERNST J

IPC分类号： H01L31/0304 ,  H01L31/107 ,  H01L15/00

CPC分类号： H01L31/03046 ,  H01L31/1075 ,  Y02E10/544

摘要： A photodetector for radiation in the 1.0 to 2.5 micrometer region is provided; the photodetector comprising a hybrid material photodiode including a photon absorption material and an avalanche multiplying junction.

摘要翻译： 提供了在1.0至2.5微米区域内用于辐射的光电检测器; 所述光检测器包括包含光子吸收材料和雪崩倍增结的混合材料光电二极管。

公开(公告)号：US3877054A

公开(公告)日：1975-04-08

申请号：US41386573

申请日：1973-11-08

申请人： BELL TELEPHONE LABOR INC

发明人： BOULIN DAVID MCELROY ,  KAHNG DAWON ,  LIGENZA JOSEPH RAYMOND ,  SUNDBURG WILLIAM JOSEPH

IPC分类号： H01L21/8247 ,  G11C16/04 ,  H01L29/788 ,  H01L29/792 ,  H01L11/00 ,  H01L15/00

CPC分类号： H01L29/792 ,  G11C16/0466

摘要： An SI.sub.1 I.sub.2 M (semiconductor-insulator.sub.1 insulator.sub.2 -metal) memory structure is characterized by the presence of an impurity, such as tungsten, concentrated in a region including the interface ("I.sub.1 I.sub.2 ") between the I.sub.1 and I.sub.2 layers. This metallic impurity provides a well-defined I.sub.1 I.sub.2 interface region, including a potential minimum ("well"), such that the I.sub.1 I.sub.2 interface can be filled with electronic charge carriers (electrons or holes) which have been transported from the semiconductor under the influence of electric fields applied across the structure. The presence versus absence of captured electronic charge carriers at the I.sub.1 I.sub.2 interface can be used as a memory indicator.

公开(公告)号：US3864726A

公开(公告)日：1975-02-04

申请号：US38356573

申请日：1973-07-30

申请人： SEMIKRON GES FOR GLEICHRICHTER

发明人： SEMIKRON GESELLSCHAFT FUR GLEI

IPC分类号： H01L29/74 ,  H01L29/08 ,  H01L11/00 ,  H01L15/00

CPC分类号： H01L29/0839

摘要： A controllable semiconductor rectifier device of the type having a monocrystalline semiconductor body having four layer-type zones of alternatingly opposite conductivity types with a portion of the one inner zone which serves as the base zone, and which portion is to support a control electrode, extending to the same major surface of the semiconductor body as the adjacent outer zone which serves as the emitter zone. A respective load current electrode ohmically contacts each of the two outer zones of the semiconductor body and the control electrode ohmically contacts the portion of the base zone which extends to the major surface. The emitter zone has a first section which is recessed from the major surface of the semiconductor body and extends to a first depth below the major surface of the semiconductor body and a second section, which is disposed at the edge of the first section at the major surface and extends to a second depth from the major surface of the semiconductor body, which second depth is less than the first depth. The respective load current electrode only contacts the first section of the emitter zone. The pn-junction which is formed by the edge section of the emitter zone and the base zone has a major portion lying in a plane substantially parallel to the major surface of the semiconductor body.

摘要翻译： 一种可控制的半导体整流器件，其具有单晶半导体本体，该单晶半导体本体具有交替相反的导电类型的四个层型区域，一个内部区域的一部分用作基极区域，并且该部分用于支撑控制电极， 与作为发射极区域的相邻外部区域的半导体主体的相同主表面。 相应的负载电流电极欧姆接触半导体本体的两个外部区域中的每一个并且控制电极欧姆接触延伸到主表面的基部区域的部分。 发射区具有第一部分，该第一部分从半导体主体的主表面凹入并延伸到半导体主体的主表面下方的第一深度;以及第二部分，其设置在主要部分的第一部分的边缘处 并且从半导体主体的主表面延伸到第二深度，该第二深度小于第一深度。 各负载电流电极仅接触发射极区的第一部分。 由发射区和基区的边缘部分形成的pn结具有大致平行于半导体主体表面的平面的主要部分。

公开(公告)号：US3852797A

公开(公告)日：1974-12-03

申请号：US33884173

申请日：1973-03-07

申请人： PHILIPS CORP

发明人： LEBAILLY J ,  DUBOIS J

IPC分类号： H05B33/14 ,  H01L21/331 ,  H01L27/00 ,  H01L27/15 ,  H01L29/73 ,  H01L29/74 ,  H01L31/00 ,  H01L31/14 ,  H01L31/153 ,  H01L33/00 ,  H05B33/12 ,  H01L15/00

CPC分类号： H01L33/0016 ,  H01L27/00 ,  H01L31/00 ,  H01L31/153 ,  H01L33/00

摘要： Electroluminescent semiconductor device with brightness control comprising an electroluminescent diode and three transistor regions one of which is made from a material having a forbidden band distance which is smaller than the energy of the radiation emitted by the diode, and one region separates the diode optically from a photoconductive region which is destined to receive radiation other than that of the diode.

摘要翻译： 具有亮度控制的电致发光半导体器件包括电致发光二极管和三个晶体管区域，其中之一由具有比由二极管发射的辐射的能量小的禁带距离的材料制成，并且一个区域将二极管与 光电导区域，其目的地是接收二极管以外的辐射。