公开(公告)号：US08782569B1

公开(公告)日：2014-07-15

申请号：US13802868

申请日：2013-03-14

Applicant: United Microelectronics Corp.

Inventor： Chain-Ting Huang ,  Yung-Feng Cheng ,  Ming-Jui Chen

IPC: G06F17/50

CPC classification number: G03F1/84

Abstract: An inspection method for a photo-mask in a semiconductor process is provided. First, a first photo-mask with a first wafer anchor point (1st wafer FAM) is provided. Then, Dmax and Dmin are calculated according to the 1st wafer FAM. A second photo-mask and a second mask anchor point (2nd mask FAM) of the second photo-mask are provided. A CD average, and a CD range of the second photo-mask are measured. Finally, the second photo-mask is inspected by using equation A and/or equation B: CD average−2nd mask FAM

Abstract translation: 提供了半导体工艺中的光掩模检查方法。 首先，提供具有第一晶片固定点（第一晶片FAM）的第一光掩模。 然后，根据第一晶片FAM计算Dmax和Dmin。 提供第二光掩模的第二光掩模和第二掩模锚定点（第二掩模FAM）。 测量CD平均值和第二光掩模的CD范围。 最后，使用等式A和/或等式B检查第二光掩模：CD平均第二掩模FAM