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公开(公告)号：US11977335B2
公开(公告)日：2024-05-07
申请号：US17353582
申请日：2021-06-21
Applicant: United Microelectronics Corp.
Inventor： Min Cheng Yang , Wei Cyuan Lo , Yung-Feng Cheng
CPC classification number: G03F7/70466 , G03F1/36 , G03F1/70 , G03F7/70475
Abstract: A pattern decomposition method including following steps is provided. A target pattern is provided, wherein the target pattern includes first patterns and second patterns alternately arranged, and the width of the second pattern is greater than the width of the first pattern. Each of the second patterns is decomposed into a third pattern and a fourth pattern, wherein the third pattern and the fourth pattern have an overlapping portion, and a pattern formed by overlapping the third pattern and the fourth pattern is the same as the second pattern. The third patterns and the first pattern adjacent to the fourth pattern are designated as first photomask patterns of a first photomask. The fourth patterns and the first pattern adjacent to the third pattern are designated as second photomask patterns of a second photomask.
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公开(公告)号：US20220382169A1
公开(公告)日：2022-12-01
申请号：US17353582
申请日：2021-06-21
Applicant: United Microelectronics Corp.
Inventor： Min Cheng Yang , Wei Cyuan Lo , Yung-Feng Cheng
Abstract: A pattern decomposition method including following steps is provided. A target pattern is provided, wherein the target pattern includes first patterns and second patterns alternately arranged, and the width of the second pattern is greater than the width of the first pattern. Each of the second patterns is decomposed into a third pattern and a fourth pattern, wherein the third pattern and the fourth pattern have an overlapping portion, and a pattern formed by overlapping the third pattern and the fourth pattern is the same as the second pattern. The third patterns and the first pattern adjacent to the fourth pattern are designated as first photomask patterns of a first photomask. The fourth patterns and the first pattern adjacent to the third pattern are designated as second photomask patterns of a second photomask.
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公开(公告)号：US20230400759A1
公开(公告)日：2023-12-14
申请号：US17836992
申请日：2022-06-09
Applicant: United Microelectronics Corp.
Inventor： Min Cheng Yang , Wei Cyuan Lo , Yung-Feng Cheng
Abstract: A photomask design correction method is provided. The photomask design correction method includes the following steps. A layer information data is provided. An OPC process is performed on the layer information data to obtain a first photomask data. A photomask is fabricated based on the first photomask data. A pattern information data of the photomask is obtained after the photomask is fabricated. The difference between the pattern information data and a database of the OPC process is analyzed. An OPC model of the OPC process is corrected based on the difference to obtain a corrected OPC model. The OPC process is performed using the corrected OPC model on the layer information data to obtain a second photomask data.
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