公开(公告)号：US20180158936A1

公开(公告)日：2018-06-07

申请号：US15695078

申请日：2017-09-05

Applicant: University of Electronic Science and Technology of China

Inventor： Wanjun CHEN ,  Yijun SHI ,  Jie LIU ,  Xingtao CUI ,  Guanhao HU ,  Chao LIU ,  Qi ZHOU ,  Bo ZHANG

IPC: H01L29/739 ,  H01L29/20 ,  H01L29/205

Abstract: The present invention relates to the field of semiconductor switches, and relates more particularly to a GaN-based bidirectional switch device. The present invention provides a gate-controlled tunneling bidirectional switch device without Ohmic-contact, which avoids a series of negative effects (such as current collapse, incompatibility with traditional CMOS process) caused by the high temperature ohm annealing process. Each insulated gate structure near schottky-contact controls the band structure of the schottky-contact to change the working state of the device, realizing the bidirectional switch's ability of bidirectional conducting and blocking. Due to the only presence of schottky in this invention, no heavy elements such as gold is needed, and this device is compatible with traditional CMOS technology.