公开(公告)号：US20230036698A1

公开(公告)日：2023-02-02

申请号：US17876582

申请日：2022-07-29

Applicant: University of Electronic Science and Technology of China ,  Institute of Electronic and Information Engineering of UESTC in Guangdong

Inventor： Ruize SUN ,  Wanjun CHEN ,  Chao LIU ,  Pan LUO ,  Fangzhou WANG

IPC: H01L29/20 ,  H01L29/66 ,  H01L29/778 ,  H01L29/06

Abstract: A reverse blocking gallium nitride (GaN) high electron mobility transistor includes, sequentially stacked from bottom to top, a substrate, a nucleation layer, a buffer layer, a barrier layer, a dielectric layer. The buffer layer and the barrier layer form a heterojunction structure. The barrier layer is provided with at least two p-GaN structures. The barrier layer is provided with a source metal at one end and a drain metal at the other end, source metal forms ohmic contact and drain metal forms Schottky contact with AlGaN barrier, respectively. In forward conduction, the two-dimensional electron gas below the spaced p-GaN structure connected to the drain metal is conductive, and a turn-on voltage of the device is low. During reverse blocking, the two-dimensional electron gas at the spaced p-GaN structure is rapidly depleted under reverse bias, to form a depletion region, so that the blocking capability of the device is improved.

公开(公告)号：US20180158936A1

公开(公告)日：2018-06-07

申请号：US15695078

申请日：2017-09-05

Applicant: University of Electronic Science and Technology of China

Inventor： Wanjun CHEN ,  Yijun SHI ,  Jie LIU ,  Xingtao CUI ,  Guanhao HU ,  Chao LIU ,  Qi ZHOU ,  Bo ZHANG

IPC: H01L29/739 ,  H01L29/20 ,  H01L29/205

Abstract: The present invention relates to the field of semiconductor switches, and relates more particularly to a GaN-based bidirectional switch device. The present invention provides a gate-controlled tunneling bidirectional switch device without Ohmic-contact, which avoids a series of negative effects (such as current collapse, incompatibility with traditional CMOS process) caused by the high temperature ohm annealing process. Each insulated gate structure near schottky-contact controls the band structure of the schottky-contact to change the working state of the device, realizing the bidirectional switch's ability of bidirectional conducting and blocking. Due to the only presence of schottky in this invention, no heavy elements such as gold is needed, and this device is compatible with traditional CMOS technology.