公开(公告)号：US20200066714A1

公开(公告)日：2020-02-27

申请号：US16255851

申请日：2019-01-24

Applicant: University of Electronic Science and Technology of China

Inventor： Ming QIAO ,  Song PU ,  Bo ZHANG

IPC: H01L27/06 ,  H01L21/784 ,  H01L21/8258

Abstract: A BIPOLAR-CMOS-DMOS (BCD) semiconductor device and manufacturing method, which can integrate a Junction Field-Effect Transistor (JFET), two classes of Vertical Double-diffusion Metal Oxide Semiconductor (VDMOS), a Lateral Insulated-Gate Bipolar Transistor (LIGBT) and seven kinds of Laterally Diffused Metal Oxide Semiconductor (LDMOS), a low-voltage Negative channel Metal Oxide Semiconductor (NMOS), a low-voltage Positive channel Metal Oxide Semiconductor (PMOS), a low-voltage Negative-Positive-Negative (NPN) transistor and a low-voltage Positive-Negative-Positive (PNP) transistor, and a diode in the same chip. Bipolar devices in the analog circuit, power components in the switch circuit, Complementary Metal Oxide Semiconductor (CMOS) devices in the logic circuit and other kinds of lateral and vertical components are integrated. This present invention saves costs at the same time greatly improve chip integration. The manufacturing method of the present invention is simple, and the difficulty of process is relatively less.