公开(公告)号：US20200235231A1

公开(公告)日：2020-07-23

申请号：US16601609

申请日：2019-10-15

Applicant: University of Electronic Science and Technology of China

Inventor： Zehong LI ,  Xin PENG ,  Yishang ZHAO ,  Min REN ,  Bo ZHANG

IPC: H01L29/739 ,  H01L29/423 ,  H01L29/10

Abstract: The present invention relates to the technical field of power semiconductor devices, particularly to an insulated gate bipolar transistor with a MOS controllable hole path. According to the present invention, a MOS controllable gate structure formed by a gate dielectric layer, a MOS control gate electrode and a P-type MOS channel region are embedded in a P+ floating p-body region of the conventional IGBT structure. The MOS region is equivalent to a switch controlled by a gate voltage. When the device is turned on under a forward voltage, the potential of the p-body region is floated to store holes, reducing the saturation conduction voltage drop of the device. Under the condition of turn-off and short-circuit, the hole extracting path is provided and the Miller capacitance is lowered, thereby lowering the turn-off losses and enhancing the short-circuit withstand capability.