公开(公告)号：US20230326973A1

公开(公告)日：2023-10-12

申请号：US17848422

申请日：2022-06-24

Applicant: University of Electronic Science and Technology of China

Inventor： Zekun ZHOU ,  Jianwen CAO ,  Yue SHI ,  Bo ZHANG

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L29/7821 ,  H01L29/66068 ,  H01L29/0619 ,  H01L29/782

Abstract: A multi-level gate driver applied to the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) includes three parts: the SiC MOSFET information detection circuit, the signal level shifting circuit, and the segmented driving circuit. The SiC MOSFET information detection circuit includes the SiC MOSFET drain-source voltage detection circuit and the SiC MOSFET drain-source current detection circuit. The segmented driving circuit includes a turn-on segmented driving circuit and a turn-off segmented driving circuit. The SiC MOSFET drain-source voltage detection circuit and the SiC MOSFET drain-source current detection circuit process a drain-source voltage and a drain-source current during the SiC MOSFET's switching as enable signals for segmented driving; the signal level shifting circuit transfers enable signals required by the segmented driving circuit to the suitable power supply rail; and the SiC MOSFET turn-on segmented driving circuit and the turn-off segmented driving circuit select suitable driving currents.