公开(公告)号：US20230326973A1

公开(公告)日：2023-10-12

申请号：US17848422

申请日：2022-06-24

Applicant: University of Electronic Science and Technology of China

Inventor： Zekun ZHOU ,  Jianwen CAO ,  Yue SHI ,  Bo ZHANG

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L29/7821 ,  H01L29/66068 ,  H01L29/0619 ,  H01L29/782

Abstract: A multi-level gate driver applied to the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) includes three parts: the SiC MOSFET information detection circuit, the signal level shifting circuit, and the segmented driving circuit. The SiC MOSFET information detection circuit includes the SiC MOSFET drain-source voltage detection circuit and the SiC MOSFET drain-source current detection circuit. The segmented driving circuit includes a turn-on segmented driving circuit and a turn-off segmented driving circuit. The SiC MOSFET drain-source voltage detection circuit and the SiC MOSFET drain-source current detection circuit process a drain-source voltage and a drain-source current during the SiC MOSFET's switching as enable signals for segmented driving; the signal level shifting circuit transfers enable signals required by the segmented driving circuit to the suitable power supply rail; and the SiC MOSFET turn-on segmented driving circuit and the turn-off segmented driving circuit select suitable driving currents.

公开(公告)号：US20180164842A1

公开(公告)日：2018-06-14

申请号：US15599484

申请日：2017-05-19

Applicant: University of Electronic Science and Technology of China

Inventor： Zekun ZHOU ,  Yao WANG ,  Jianwen CAO ,  Hongming YU ,  Yunkun WANG ,  Anqi WANG ,  Zhuo WANG ,  Bo ZHANG

IPC: G05F1/46 ,  G05F3/24 ,  G05F3/16 ,  H02J7/00

CPC classification number: G05F1/46 ,  G05F3/16 ,  G05F3/242 ,  H02J7/0047 ,  H02J2007/0095

Abstract: A resistorless CMOS low power voltage reference circuit is provided. The start-up circuit is used to prevent the circuit to stay in the zero state and stop working when the circuit gets out of the zero state. The self-biased VPTAT generating circuit generate the voltage VPTAT which has positive temperature coefficient. The square-law current generating circuit generates a square-law current which is proportional to μT2 through the VPTAT. Finally, the reference voltage VREF is obtained by introducing the square-law current into the reference voltage output circuit. The reference voltage VREF of this application can realize approximative zero temperature coefficient in the temperature range of −40° C.˜ 100° C. This application improves temperature characteristic which may be poorer due to temperature nonlinearity of carrier mobility based on the traditional subthreshold reference. This application can reduce the power consumption from μW level to nW level and realize low power consumption.