LOGICAL TO PHYSICAL ADDRESS MAPPING IN STORAGE SYSTEMS COMPRISING SOLID STATE MEMORY DEVICES
    1.
    发明申请
    LOGICAL TO PHYSICAL ADDRESS MAPPING IN STORAGE SYSTEMS COMPRISING SOLID STATE MEMORY DEVICES 有权
    在包含固态存储器件的存储系统中逻辑地址映射

    公开(公告)号:US20130124794A1

    公开(公告)日:2013-05-16

    申请号:US13812377

    申请日:2011-07-25

    IPC分类号: G06F12/02

    摘要: The present idea provides a high read and write performance from/to a solid state memory device. The main memory of the controller is not blocked by a complete address mapping table covering the entire memory device. Instead such table is stored in the memory device itself, and only selected portions of address mapping information are buffered in the main memory in a read cache and a write cache. A separation of the read cache from the write cache enables an address mapping entry being evictable from the read cache without the need to update the related flash memory page storing such entry in the flash memory device. By this design, the read cache may advantageously be stored on a DRAM even without power down protection, while the write cache may preferably be implemented in nonvolatile or other fail-safe memory. This leads to a reduction of the overall provisioning of nonvolatile or fail-safe memory and to an improved scalability and performance.

    摘要翻译: 本想法提供了从/到固态存储器件的高读/写性能。 控制器的主存储器不被覆盖整个存储器件的完整地址映射表阻止。 相反,这样的表被存储在存储器设备本身中,并且只有地址映射信息的选定部分被缓存在读取高速缓存和写入高速缓存中的主存储器中。 读取高速缓存与写入高速缓存的分离使得能够从读取的高速缓存中取出地址映射条目,而不需要在闪存设备中更新存储这样的条目的相关闪存页面。 通过这种设计,读取高速缓存可以有利地存储在DRAM上,即使没有掉电保护,而写入高速缓存也可以优选地被实现在非易失性或其它故障安全存储器中。 这导致了非易失性或故障安全存储器的总体配置的减少以及改进的可扩展性和性能。

    Logical to physical address mapping in storage systems comprising solid state memory devices
    2.
    发明授权
    Logical to physical address mapping in storage systems comprising solid state memory devices 有权
    在包含固态存储器件的存储系统中的逻辑到物理地址映射

    公开(公告)号:US09256527B2

    公开(公告)日:2016-02-09

    申请号:US13812377

    申请日:2011-07-25

    IPC分类号: G06F12/02 G06F12/08

    摘要: The present idea provides a high read and write performance from/to a solid state memory device. The main memory of the controller is not blocked by a complete address mapping table covering the entire memory device. Instead such table is stored in the memory device itself, and only selected portions of address mapping information are buffered in the main memory in a read cache and a write cache. A separation of the read cache from the write cache enables an address mapping entry being evictable from the read cache without the need to update the related flash memory page storing such entry in the flash memory device. By this design, the read cache may advantageously be stored on a DRAM even without power down protection, while the write cache may preferably be implemented in nonvolatile or other fail-safe memory. This leads to a reduction of the overall provisioning of nonvolatile or fail-safe memory and to an improved scalability and performance.

    摘要翻译: 本想法提供了从/到固态存储器件的高读/写性能。 控制器的主存储器不被覆盖整个存储器件的完整地址映射表阻止。 相反,这样的表被存储在存储器设备本身中,并且只有地址映射信息的选定部分被缓存在读取高速缓存和写入高速缓存中的主存储器中。 读取高速缓存与写入高速缓存的分离使得能够从读取的高速缓存中取出地址映射条目,而不需要在闪存设备中更新存储这样的条目的相关闪存页面。 通过这种设计,读取高速缓存可以有利地存储在DRAM上,即使没有掉电保护,而写入高速缓存也可以优选地被实现在非易失性或其它故障安全存储器中。 这导致了非易失性或故障安全存储器的总体配置的减少以及改进的可扩展性和性能。

    Wear-level of cells/pages/sub-pages/blocks of a memory
    5.
    发明授权
    Wear-level of cells/pages/sub-pages/blocks of a memory 有权
    存储器的单元/页/子页/块的磨损级别

    公开(公告)号:US09170933B2

    公开(公告)日:2015-10-27

    申请号:US13700545

    申请日:2011-06-06

    IPC分类号: G06F9/312 G06F12/02 G11C16/34

    摘要: A method for wear-leveling cells, pages, sub-pages or blocks of a memory such as a flash memory includes receiving (S10) a chunk of data to be written on the cell, page, sub-page or block of the memory; counting (S40), in the received chunk of data, a number of times a given type of binary data ‘0’ or ‘1’ is to be written; and distributing (S50) the writing of the received chunk of data among cells, pages, sub-pages or blocks of the memory such as to wear-level the memory with respect to the number of the given type of binary data ‘0’ or ‘1’ counted in the chunk of data to be written.

    摘要翻译: 一种用于对诸如闪速存储器的存储器的单元,页,子页或块进行磨损均衡的方法包括:接收(S10)要写入存储器的单元,页,子页或块的数据块; 在接收到的数据块中计数(S40)多少次给定类型的二进制数据“0”或“1”被写入; 并且分配(S50)在所述存储器的单元,页面,子页面或块之间写入所接收的数据块,以便相对于给定类型的二进制数据“0”的数量对存储器进行磨损级别 “1”计入要写入的数据块中。

    WEAR-LEVEL OF CELLS/PAGES/SUB-PAGES/BLOCKS OF A MEMORY
    7.
    发明申请
    WEAR-LEVEL OF CELLS/PAGES/SUB-PAGES/BLOCKS OF A MEMORY 有权
    细胞/页/子页面/记忆体的层数

    公开(公告)号:US20130166827A1

    公开(公告)日:2013-06-27

    申请号:US13700545

    申请日:2011-06-06

    IPC分类号: G06F12/02

    摘要: The invention is directed to a method for wear-leveling cells or pages or sub-pages or blocks of a memory such as a flash memory, the method comprising:—receiving (S10) a chunk of data to be written on a cell or page or sub-page or block of the memory;—counting (S40) in the received chunk of data the number of times a given type of binary data ‘0’ or ‘I’ is to be written; and—distributing (S50) the writing of the received chunk of data amongst cells or pages or sub-pages or blocks of the memory such as to wear-level the memory with respect to the number of the given type of binary data ‘0’ or ‘I’ counted in the chunk of data to be written.

    摘要翻译: 本发明涉及一种用于对诸如闪速存储器的存储器的单元格或页面或子页面或块进行磨损均衡的方法,所述方法包括: - 接收(S10)要写入单元或页面的数据块 或存储器的子页面或块; - 在接收的数据块中记录给定类型的二进制数据“0”或“I”的次数(S40); (S50)在存储器的单元格或页面或子页面或块之间写入所接收的数据块,以便相对于给定类型的二进制数据“0”的数量对存储器进行磨损级别 或者“我”在要写入的数据块中计数。

    VALID PAGE THRESHOLD BASED GARBAGE COLLECTION FOR SOLID STATE DRIVE
    9.
    发明申请
    VALID PAGE THRESHOLD BASED GARBAGE COLLECTION FOR SOLID STATE DRIVE 有权
    基于固定状态驱动器的基于页面阈值的收集

    公开(公告)号:US20140032817A1

    公开(公告)日:2014-01-30

    申请号:US13560065

    申请日:2012-07-27

    IPC分类号: G06F12/00

    摘要: A method for garbage collection in a solid state drive (SSD) includes determining whether the SSD is idle by a garbage collection module of the SSD; based on determining that the SSD is idle, determining a victim block from a plurality of memory blocks of the SSD; determining a number of valid pages in the victim block; comparing the determined number of valid pages in the victim block to a valid page threshold; and based on the number of valid pages in the victim block being less than the valid page threshold, issuing a garbage collection request for the victim block.

    摘要翻译: 一种在固态硬盘(SSD)中进行垃圾收集的方法,包括:通过SSD的垃圾收集模块确定SSD是否空闲; 基于确定所述SSD是空闲的,从所述SSD的多个存储块中确定受害者块; 确定受害者块中的有效页数; 将确定的受害者块中的有效页面数量与有效页面阈值进行比较; 并且基于受害者块中的有效页面的数量小于有效页面阈值,向受害者块发布垃圾收集请求。

    Valid page threshold based garbage collection for solid state drive
    10.
    发明授权
    Valid page threshold based garbage collection for solid state drive 有权
    基于固态驱动器的基于页面阈值的垃圾回收

    公开(公告)号:US08799561B2

    公开(公告)日:2014-08-05

    申请号:US13560065

    申请日:2012-07-27

    IPC分类号: G06F12/02

    摘要: A method for garbage collection in a solid state drive (SSD) includes determining whether the SSD is idle by a garbage collection module of the SSD; based on determining that the SSD is idle, determining a victim block from a plurality of memory blocks of the SSD; determining a number of valid pages in the victim block; comparing the determined number of valid pages in the victim block to a valid page threshold; and based on the number of valid pages in the victim block being less than the valid page threshold, issuing a garbage collection request for the victim block.

    摘要翻译: 一种在固态硬盘(SSD)中进行垃圾收集的方法,包括:通过SSD的垃圾收集模块确定SSD是否空闲; 基于确定所述SSD是空闲的,从所述SSD的多个存储块中确定受害者块; 确定受害者块中的有效页数; 将确定的受害者块中的有效页面数量与有效页面阈值进行比较; 并且基于受害者块中的有效页面的数量小于有效页面阈值,向受害者块发布垃圾回收请求。