公开(公告)号：US07065424B1

公开(公告)日：2006-06-20

申请号：US10794796

申请日：2004-03-04

申请人： William MacDonald ,  George Logsdon ,  Darren Lee Rust

发明人： William MacDonald ,  George Logsdon ,  Darren Lee Rust

IPC分类号： G06F19/00

CPC分类号： G06Q10/06

摘要： This invention introduces systems and methods that control production process quality, wherein the production process has a plurality of durable items, each durable item is associated with a re-qualification process initiated as a function of a life expectancy associated therewith. The life expectancy associated with each durable item is reset upon completion of the associated re-qualification process. An exemplary method comprises (I) monitoring re-qualification indicia associated with each associated re-qualification process, and (ii) controlling availability of re-qualified durable items of the production process as a function of the re-qualification indicia to thereby control production process quality.

摘要翻译： 本发明引入了控制生产过程质量的系统和方法，其中生产过程具有多个耐用物品，每个耐用物品与作为与其相关联的预期寿命的函数启动的重新认证过程相关联。 在相关联的重新认证过程完成后，与每个持久项目相关联的预期寿命将重置。 示例性方法包括（I）监测与每个相关联的重新认证过程相关联的重新认证标记，以及（ii）根据重新认证标记来控制生产过程的重新认证的耐久项目的可用性，从而控制生产 工艺质量

公开(公告)号：US07043317B1

公开(公告)日：2006-05-09

申请号：US10698007

申请日：2003-10-30

申请人： Darren Lee Rust ,  George W. Logsdon

发明人： Darren Lee Rust ,  George W. Logsdon

IPC分类号： G06F19/00 ,  H01H43/00

CPC分类号： G05B19/41865 ,  H01L21/67276 ,  Y02P90/20

摘要： A system and method is disclosed for monitoring each of a plurality of furnaces in a furnace process in semiconductor wafer fabrication. A furnace that is left open too long will absorb moisture from the atmosphere and should not be used for a furnace task. The system of the invention comprises a furnace resource allocator that comprises a furnace idle timer unit that keeps track of how long each furnace has been open. If the idle time for a selected furnace exceeds a predetermined limit, that furnace is rejected and another furnace is selected for use. Each furnace that is rejected is subjected to a furnace cycle purge process to remove moisture from the furnace so that the furnace may again be available for use.

摘要翻译： 公开了一种用于监测半导体晶片制造中的炉工艺中的多个炉中的每一个的系统和方法。 打开太长的炉子将吸收大气中的水分，不能用于炉子任务。 本发明的系统包括炉资源分配器，其包括炉怠速定时器单元，其跟踪每个炉已经打开多长时间。 如果所选择的炉子的空闲时间超过预定极限，则该炉子被排出并选择另一个炉子使用。 被排除的每个炉子经受炉周期吹扫处理以从炉中除去水分，使得炉子可以再次可供使用。

公开(公告)号：US07470594B1

公开(公告)日：2008-12-30

申请号：US11302920

申请日：2005-12-14

申请人： Richard W. Foote, Jr. ,  William Max Coppock ,  Darren Lee Rust ,  Charles A. Dark

发明人： Richard W. Foote, Jr. ,  William Max Coppock ,  Darren Lee Rust ,  Charles A. Dark

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02255 ,  H01L29/0804 ,  Y10S438/905

摘要： A method is disclosed for controlling the formation of an interfacial oxide layer in a polysilicon emitter transistor device. The interfacial oxide layer is formed between an underlying substrate of single crystal silicon and an upper layer of polysilicon. The current gain and the emitter resistance of the transistor device are related to the thickness of the interfacial oxide layer. The oxide of the interfacial oxide layer is grown in a low pressure, low temperature pure oxygen (O2) environment that greatly reduces the oxidation rate. The low oxidation rate allows the thickness of the interfacial oxide layer to be precisely controlled and sources of variation to be minimized in the manufacturing process.

摘要翻译： 公开了一种用于控制多晶硅发射极晶体管器件中的界面氧化物层的形成的方法。 界面氧化物层形成在单晶硅的下面的衬底和多晶硅的上层之间。 晶体管器件的电流增益和发射极电阻与界面氧化物层的厚度有关。 界面氧化物层的氧化物在低压，低温纯氧（O 2）环境中生长，大大降低了氧化速率。 低氧化速率允许在制造过程中精细控制界面氧化物层的厚度和变化的来源。