公开(公告)号：US11133187B2

公开(公告)日：2021-09-28

申请号：US16046069

申请日：2018-07-26

Applicant: Winbond Electronics Corp.

Inventor： Chun-Hung Lin ,  Ching-Chun Huang ,  Chung-Chen Hsu

IPC: G03F1/68 ,  G03F1/70 ,  H01L21/027 ,  H01L21/266 ,  G03F1/00

Abstract: A method for forming a photo-mask includes providing a first pattern, wherein the first pattern includes a first light-transmitting region and a first light-shielding region; transforming the first pattern into a second pattern, wherein the second pattern includes a second light-transmitting region and a second light-shielding region, the second light-transmitting region is located within range of the first light-transmitting region, and the second light-transmitting region has an area which is smaller than that of the first light-transmitting region, the second light-shielding region includes the entire region of the first light-shielding region, and the second light-shielding region has an area which is greater than that of the first light-shielding region; and forming the second pattern on a photo-mask substrate to form a photo-mask, wherein the photo-mask is used in an ion implantation process of a material layer.