公开(公告)号：US20230369151A1

公开(公告)日：2023-11-16

申请号：US18310488

申请日：2023-05-01

Applicant: XINTEC INC.

Inventor： Hsiao-Lan YEH ,  Chin-Kang CHEN ,  Kung-Hua CHENG ,  Szu-Hui MA LEE ,  Chi-Jia TONG

IPC: H01L23/14 ,  H01L21/683 ,  H01L21/56 ,  H01L21/02

CPC classification number: H01L23/142 ,  H01L21/6835 ,  H01L21/56 ,  H01L21/02348 ,  H01L2221/68318 ,  H01L2221/68345

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first transparent substrate, a conductive layer, an insulating protective layer, a second transparent substrate, a device substrate, and a bonding layer. The first transparent substrate has a first surface and an opposite second surface. The conductive layer is disposed on the second surface of the first transparent substrate. The insulating protective layer covers the conductive layer and the first transparent substrate. The second transparent substrate is disposed above the first transparent substrate, and has a first surface facing the first transparent substrate and an opposite second surface. The device substrate is disposed on the second surface of the second transparent substrate. The bonding layer is bonded to the insulating protective layer and the first surface of the second transparent substrate.