公开(公告)号：US20240417620A1

公开(公告)日：2024-12-19

申请号：US18814585

申请日：2024-08-26

Applicant: YCCHEM CO., LTD.

Inventor： Jun Han KIM ,  Seung Oh JIN ,  Seung Hyun LEE ,  Seung Hun LEE

IPC: C09K13/08 ,  H01L21/3213

Abstract: The present invention relates to an etchant composition for etching a molybdenum film and a modified molybdenum film while suppressing the etching of an aluminum oxide film and a silicon oxide film, and an etching method therefor, wherein the etchant composition comprises, with respect to the total weight of the composition: 0.1 to 10% by weight of inorganic acid; 0.001 to 5% by weight of an oxidizer; 0.001 to 3% by weight of a fluorine compound; 2 to 4% by weight of a pH adjusting agent; 0.0001 to 2% by weight of an additive; and a residual amount of water.

公开(公告)号：US20250013154A1

公开(公告)日：2025-01-09

申请号：US18830633

申请日：2024-09-11

Applicant: YCCHEM CO., LTD.

Inventor： Su Jin LEE ,  Gi Hong KIM ,  Jeong Hun LEE ,  Seung Hun LEE ,  Seung Hyun LEE

IPC: G03F7/11 ,  G03F7/16 ,  H01L21/027 ,  H01L21/308

Abstract: The present invention relates to a spin-on carbon hard mask composition with higher planarization performance, which is useful in semiconductor lithography processes, and a patterning method using same. The composition according to the present invention contains the 3′,6′-Dihydroxy-3H-spiro[2-benzofuran-1,9′-xanthen]-3-one derivative polymer represented by the following chemical formula 1, an organic solvent, and a surfactant and exhibits excellent effects including excellent solubility, uniform coating performance, high etch-resistance enduring multi-etch processes, excellent mechanical properties, and high planarization properties.