公开(公告)号：US06689427B2

公开(公告)日：2004-02-10

申请号：US09933736

申请日：2001-08-22

申请人： Yo Sep Min ,  Young Jin Cho ,  Dae Sig Kim ,  Ik Mo Lee ,  Sun Kwon Lim ,  Wan In Lee ,  Bo Hyun Choi

发明人： Yo Sep Min ,  Young Jin Cho ,  Dae Sig Kim ,  Ik Mo Lee ,  Sun Kwon Lim ,  Wan In Lee ,  Bo Hyun Choi

IPC分类号： C23C1600

CPC分类号： C23C16/409 ,  C07C225/14

摘要： An organometallic precursor of a formula M(L)2 for use in formation of metal oxide thin films, in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of −2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1-8 alkyl group; and R3 is a linear or branched C1-8 alkylene group. Also disclosed is a chemical vapor deposition method wherein a metal oxide thin film is formed on a substrate using the organometallic precursor. The precursor exhibits excellent volatility, thermal property and hydrolytic stability and is particularly suitable for the deposition of a multi-component metal oxide thin film containing a group IV metal such as titanium.

摘要翻译： 用于形成金属氧化物薄膜的式M（L）2的有机金属前体，其中M是电荷为+4的第IV族金属离子，L为带电荷的三齿配体， 配体由下式（I）表示：其中R 1和R 2各自独立地为直链或支链C 1-8烷基; 且R 3为直链或支链C 1-8亚烷基。 还公开了一种化学气相沉积方法，其中使用有机金属前体在基板上形成金属氧化物薄膜。 前体表现出优异的挥发性，热性质和水解稳定性，特别适用于沉积含有IV族金属如钛的多组分金属氧化物薄膜。