公开(公告)号：US09583336B1

公开(公告)日：2017-02-28

申请号：US15047592

申请日：2016-02-18

Applicant: Texas Instruments Incorporated

Inventor： Bhaskar Srinivasan ,  Asad Mahmood Haider ,  Brian E. Goodlin ,  Haowen Bu ,  Roger Charles McDermott

IPC: H01L35/34 ,  H01L31/18 ,  H01L21/02 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/02271 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/45557 ,  C23C16/46 ,  H01L21/02197 ,  H01L21/67248 ,  H01L21/68742

Abstract: A microelectronic device with a ferroelectric layer is formed using an MOCVD tool. A substrate is disposed on a susceptor heated to 600° C. to 650° C. A first carrier gas is flowed into a manifold to combine with a plurality of metal organic precursors. The first carrier gas, the metal organic precursors, and a second carrier gas, are flowed through a vaporizer into a chamber of the MOCVD tool, over the substrate. A ratio of a flow rate of the first carrier gas to a flow rate of the metal organic precursors is 250 sccm/milliliter/minute to 500 sccm/milliliter/minute. A ratio of a flow rate of the second carrier gas to a flow rate of the metal organic precursors is 700 sccm/milliliter/minute to 1500 sccm/milliliter/minute. An oxidizing gas is flowed into the chamber over the substrate. The metal organic precursors and the oxidizing gas react to form the ferroelectric layer.

Abstract translation: 使用MOCVD工具形成具有铁电层的微电子器件。 将衬底设置在加热至600℃至650℃的基座上。第一载气流入歧管以与多个金属有机前体结合。 第一载气，金属有机前体和第二载气在衬底上流过气化器进入MOCVD工具的腔室。 第一载气的流量与金属有机前体的流量的比率为250sccm /毫升/分钟至500sccm /毫升/分钟。 第二载气的流量与金属有机前驱体的流量的比率为700sccm /毫升/分钟至1500sccm /毫升/分钟。 氧化气体在衬底上流入腔室。 金属有机前体和氧化气体反应形成铁电层。

公开(公告)号：US09384987B2

公开(公告)日：2016-07-05

申请号：US14571126

申请日：2014-12-15

Applicant: ASM IP Holding B.V.

Inventor： Sung-Hoon Jung

IPC: H01L21/316 ,  H01L21/28 ,  H01L29/51 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/28229 ,  C23C16/405 ,  C23C16/409 ,  C23C16/45527 ,  H01L21/02186 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02362 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517

Abstract: Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.

公开(公告)号：US20160068990A1

公开(公告)日：2016-03-10

申请号：US14784598

申请日：2014-04-07

Applicant: DREXEL UNIVERSITY

Inventor： Jonathan E. SPANIER ,  Andrei AKBASHEU

IPC: C30B1/02 ,  C23C16/56 ,  C30B29/30 ,  C30B1/04 ,  C30B29/24 ,  C30B29/32 ,  C23C16/455 ,  C23C16/40

CPC classification number: C30B1/023 ,  C23C16/40 ,  C23C16/409 ,  C23C16/45553 ,  C23C16/45555 ,  C23C16/56 ,  C30B1/026 ,  C30B1/04 ,  C30B29/24 ,  C30B29/30 ,  C30B29/32

Abstract: This disclosure provides methods for forming a perovskite film. Exemplary methods can include the steps of forming an amorphous layer on a substrate disposed in a reaction chamber, covering at least a portion of the amorphous layer with a barrier that at least partially prevents the first metal, the second metal, oxygen atoms, or a combination thereof from being released during annealing and annealing the amorphous layer to form a perovskite film. Formation of the amorphous layer on the substrate disposed in a reaction chamber may be effected by introducing a first compound comprising a first metal; introducing an oxidizing agent; and introducing a second compound comprising a second metal.

Abstract translation: 本公开提供了形成钙钛矿膜的方法。 示例性方法可以包括以下步骤：在设置在反应室中的基底上形成非晶层，用至少部分地防止第一金属，第二金属，氧原子或至少一部分的屏障覆盖非晶层的至少一部分 其组合在退火和退火期间被释放，以形成非晶层以形成钙钛矿膜。 在设置在反应室中的基板上形成非晶层可以通过引入包含第一金属的第一化合物来实现; 引入氧化剂; 并引入包含第二金属的第二化合物。

公开(公告)号：US20150180001A1

公开(公告)日：2015-06-25

申请号：US14362436

申请日：2012-03-02

Applicant: Lonnie G. Johnson ,  Davorin Babic ,  Elena N. Krumenaker ,  Tedric D. Campbell ,  Kieran J. Claffey

Inventor： Lonnie G. Johnson ,  Davorin Babic ,  Elena N. Krumenaker ,  Tedric D. Campbell ,  Kieran J. Claffey

IPC: H01M2/16 ,  H01M10/0562 ,  H01M10/0525 ,  C23C16/40

CPC classification number: H01M2/1686 ,  C01G25/006 ,  C01P2004/03 ,  C01P2006/40 ,  C23C16/40 ,  C23C16/409 ,  H01B1/08 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0562 ,  H01M2220/30 ,  H01M2300/0071 ,  H01M2300/0094

Abstract: A method for forming an amorphous ionically conductive metal oxide, such as lithium lanthanum zirconium oxide (LLZO), by chemical vapor deposition (CVD), as well as to the ionically conductive material formed by the method, are provided. Such a material may be utilized as a solid electrolyte and/or as a solid separator in an all solid state lithium battery.

Abstract translation: 提供了通过化学气相沉积（CVD）形成非晶形离子导电金属氧化物的方法，例如氧化镧锆（LLZO），以及通过该方法形成的离子导电材料。 这种材料可以在全固态锂电池中用作固体电解质和/或固体分离器。

公开(公告)号：US08853075B2

公开(公告)日：2014-10-07

申请号：US12920026

申请日：2009-02-13

Applicant: Satoko Gatineau ,  Christian Dussarrat ,  Christophe Lachaud ,  Nicolas Blasco ,  Audrey Pinchart ,  Ziyun Wang ,  Jean-Marc Girard ,  Andreas Zauner

Inventor： Satoko Gatineau ,  Christian Dussarrat ,  Christophe Lachaud ,  Nicolas Blasco ,  Audrey Pinchart ,  Ziyun Wang ,  Jean-Marc Girard ,  Andreas Zauner

IPC: H01L21/4763 ,  H01J31/12 ,  H01J29/86

CPC classification number: H01J29/86 ,  C07F17/00 ,  C23C16/405 ,  C23C16/409 ,  C23C16/45553 ,  H01J31/127 ,  H01J2201/30469

Abstract: Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.

Abstract translation: 公开了在基底上形成含钛层的方法。 在所公开的方法中，提供了具有式Ti（Me 5 C p）（OR）3的前体化合物的蒸气，其中R选自甲基，乙基或异丙基。 根据原子层沉积工艺使蒸气与基底反应，以在基底表面上形成含钛复合物。

公开(公告)号：US08809849B2

公开(公告)日：2014-08-19

申请号：US14039692

申请日：2013-09-27

Applicant: American Air Liquide, Inc.

Inventor： Venkateswara R. Pallem ,  Christian Dussarrat ,  Wontae Noh

IPC: H01L35/24

CPC classification number: H01L21/02192 ,  C07C257/12 ,  C07C257/14 ,  C07F5/00 ,  C07F17/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/409 ,  C23C16/4482 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/0228 ,  H01L28/40 ,  H01L29/517

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

Abstract translation: 本文描述了用于沉积含稀土金属的层的方法和组合物。 通常，所公开的方法使用诸如化学气相沉积或原子层沉积的沉积方法沉积包含稀土含量化合物的前体化合物。 所公开的前体化合物包括具有至少一个脂族基团作为取代基的环戊二烯基配体和脒配体。

公开(公告)号：US20140225226A1

公开(公告)日：2014-08-14

申请号：US14169120

申请日：2014-01-30

Applicant: Texas Instruments Incorporated

Inventor： Bhaskar Srinivasan ,  Brian E. Goodlin ,  Haowen Bu ,  Mark Visokay

IPC: H01L49/02 ,  H01L21/02

CPC classification number: H01L21/02112 ,  C23C16/409 ,  C23C18/1216 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02263 ,  H01L28/56

Abstract: Multi-step deposition of lead-zirconium-titanate (PZT) ferroelectric material. An initial portion of the PZT material is deposited by metalorganic chemical vapor deposition (MOCVD) at a low deposition rate, for example at a temperature below about 640 deg C. from vaporized liquid precursors of lead, zirconium, and titanium, and a solvent at a collective flow rate below about 1.1 ml/min, in combination with an oxidizing gas. Following deposition of the PZT material at the low flow rate, the remainder of the PZT film is deposited at a high deposition rate, attained by changing one or more of precursor and solvent flow rate, oxygen concentration in the oxidizing gas, A/B ratio of the precursors, temperature, and the like.

Abstract translation: 钛酸锆（PZT）铁电材料的多步沉积。 PZT材料的初始部分通过金属有机化学气相沉积（MOCVD）以低沉积速率沉积，例如在低于约640℃的温度下从铅，锆和钛的汽化液体前体和溶剂中沉积 与约1.1ml / min的组合流速与氧化气体组合。 在PZT材料以低流速沉积之后，PZT膜的其余部分以高沉积速率沉积，通过改变前体和溶剂流速，氧化气体中的氧浓度，A / B比 的前体，温度等。

公开(公告)号：US20140209023A1

公开(公告)日：2014-07-31

申请号：US14244507

申请日：2014-04-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Einosuke TSUDA

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/409 ,  C23C16/45531 ,  C23C16/45582 ,  C23C16/45591 ,  H01L21/02197 ,  H01L21/0228 ,  Y10T137/4673

Abstract: A gas supply device 3 includes a device body 31 forming a substantially conical gas-conducting space 32 for conducting gases therethrough from a diametrally reduced end 32a of the space 32 to a diametrally enlarged end 32b thereof, gas introduction ports 61a to 63a, 61b to 63b, and 64, each provided near the diametrally reduced end 32a of the gas-conducting space 32 in the device body 31 to introduce the gases into the gas-conducting space 32, and a plurality of partitioning members 41 to 46 provided in the gas-conducting space 32 of the device body 31 to partition the gas-conducting space 32 concentrically. The partitioning members 42 to 46 arranged adjacently to each other at a radially outer side of the gas-conducting space 32 are greater than the adjacently arranged partitioning members 41 to 45 at a radially inner side in dimensionally diverging rate per partitioning member. Thus, internal gas flow channels of the gas supply device have high gas conductance and enhanced gas replaceability, compared with those of the conventional gas showerhead.

Abstract translation: 气体供应装置3包括装置主体31，其形成基本上圆锥形的导气空间32，用于将气体从空间32的直径减小的端部32a通过其径向扩大的端部32b，气体导入口61a至63a，61b至 63b和64分别设置在装置本体31中的气体导通空间32的径向缩小端32a附近，以将气体引入导气空间32中，并且设置在气体中的多个分隔构件41至46 导电空间32同心地分隔导气空间32。 在导气空间32的径向外侧彼此相邻设置的分隔构件42至46在每个分隔构件的尺寸上分散速率大于在径向内侧的相邻布置的分隔构件41至45。 因此，与常规气体喷头相比，气体供应装置的内部气体流动通道具有高气体导通性和增强的气体替代性。

公开(公告)号：US20140127887A1

公开(公告)日：2014-05-08

申请号：US13837994

申请日：2013-03-15

Applicant: INTERMOLECULAR, INC.

Inventor： Philip Kraus ,  Boris Borisov ,  Thai Cheng Chua ,  Sandeep Nijhawan

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  C23C16/0227 ,  C23C16/303 ,  C23C16/305 ,  C23C16/409 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45551

Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.

Abstract translation: 公开了用于在衬底上形成层的化学气相沉积（CVD）系统。 该系统的实施例包括至少两个可以在集群工具中链接的处理室。 第一处理室提供具有受控的环境温度和压力的室，并且包含用于在衬底上进行CVD的第一环境和用于使衬底与等离子体接触的第二环境; 能够在每个环境中定位用于顺序处理的基板的基板输送系统，以及能够保持隔离的气体控制系统。 第二处理室提供CVD系统。 在衬底上形成层的方法包括在每个处理室中形成一个或多个层。 该系统和方法适用于制备III-V族，II-VI族或IV族薄膜器件。

公开(公告)号：US20140124788A1

公开(公告)日：2014-05-08

申请号：US13670269

申请日：2012-11-06

Applicant: INTERMOLECULAR, INC.

Inventor： Philip Kraus ,  Boris Borisov ,  Thai Cheng Chua ,  Sandeep Nijhawan

IPC: H01L21/205 ,  H01L29/205 ,  H01L33/32

CPC classification number: H01L21/0254 ,  C23C16/0227 ,  C23C16/303 ,  C23C16/305 ,  C23C16/409 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45551

Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.