公开(公告)号：US20100001343A1

公开(公告)日：2010-01-07

申请号：US12495948

申请日：2009-07-01

申请人： Yong-cheol CHOI ,  Chang-ki JEON ,  Min-suk KIM

发明人： Yong-cheol CHOI ,  Chang-ki JEON ,  Min-suk KIM

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66681 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/7816

摘要： Provided are a high voltage semiconductor device in which a field shaping layer is formed on the entire surface of a semiconductor substrate and a method of fabricating the same. Specifically, the high voltage semiconductor device includes a first conductivity-type semiconductor substrate. A second conductivity-type semiconductor layer is disposed on a surface of the semiconductor substrate, and a first conductivity-type body region is formed in semiconductor layer. A second conductivity-type source region is formed in the body region. A drain region is formed in the semiconductor layer and is separated from the body region. The field shaping layer is formed on the entire surface of the semiconductor layer facing the semiconductor layer.

摘要翻译： 提供一种在半导体衬底的整个表面上形成场成形层的高电压半导体器件及其制造方法。 具体地，高电压半导体器件包括第一导电型半导体衬底。 在半导体衬底的表面上设置第二导电型半导体层，在半导体层中形成第一导电型体区。 在体区域中形成第二导电型源极区域。 在半导体层中形成漏区，与体区分离。 在与半导体层相对的半导体层的整个表面上形成场成形层。