公开(公告)号：US20100019240A1

公开(公告)日：2010-01-28

申请号：US12411455

申请日：2009-03-26

Applicant: Yu-Jin LEE ,  Hwang Yun-Taek

Inventor： Yu-Jin LEE ,  Hwang Yun-Taek

IPC: H01L29/786 ,  H01L21/34

CPC classification number: H01L45/1233 ,  H01L45/04 ,  H01L45/1273 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

Abstract: A resistive memory device includes: a bottom electrode formed over a substrate; and an insulation layer having a hole structure formed over the substrate structure. Herein, the hole structure exposes the bottom electrode, has sidewalls of positive slope, and has a bottom width equal to or smaller than a width of the bottom electrode; a resistive layer formed over the hole structure; and an upper electrode formed over the resistive layer.

Abstract translation: 电阻式存储器件包括：形成在衬底上的底部电极; 以及在基板结构上形成有孔结构的绝缘层。 这里，孔结构暴露底部电极，具有正斜率的侧壁，并且底部宽度等于或小于底部电极的宽度; 形成在孔结构上的电阻层; 以及形成在电阻层上的上电极。