公开(公告)号：US20250007237A1

公开(公告)日：2025-01-02

申请号：US18708730

申请日：2022-11-04

Applicant: ams-OSRAM International GmbH

Inventor： Alfred LELL ,  Christoph EICHLER ,  Sven GERHARD

IPC: H01S5/02255 ,  H01S5/22 ,  H01S5/40

Abstract: The invention relates to a component including a semiconductor body and at least one converter layer, wherein the semiconductor body includes at least one active region having an active zone, the active zone being designed to produce electromagnetic radiation. The semiconductor body has at least one vertical recess. A side wall of the recess is formed by a vertically extending facet of the active region, said facet being a radiation passage surface of the active region. The converter layer covers the recess in a top view or at least partly fills the recess. The invention also relates to a method for producing a component.

公开(公告)号：US20240405511A1

公开(公告)日：2024-12-05

申请号：US18695769

申请日：2022-09-06

Applicant: ams-OSRAM International GmbH

Inventor： Sven GERHARD ,  Alfred LELL ,  Christoph EICHLER

IPC: H01S5/10 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40

Abstract: The invention relates to an edge-emitting semiconductor laser diode, including the following features: an epitaxial semiconductor layer stack including an active one, in which during operation electromagnetic radiation is generated, wherein the epitaxial semiconductor layer stack has at least one facet which laterally delimits the epitaxial semiconductor layer stack, and the facet has at least one first partial surface and at least one second partial surface which have reflectivities differing from one another for the electromagnetic radiation generated in the active zone. The invention also relates to methods for producing a plurality of edge-emitting semiconductor laser diodes.

公开(公告)号：US20240372331A1

公开(公告)日：2024-11-07

申请号：US18686032

申请日：2022-08-26

Applicant: ams-OSRAM International GMBH

Inventor： Alfred LELL ,  Sven GERHARD ,  Christoph EICHLER

IPC: H01S5/20

Abstract: A method for producing at least one laser chip is specified, the method including the steps of growing a semiconductor layer sequence having an active zone on a substrate, removing part of the substrate, part of the active zone and part of the semiconductor layer sequence by dry-chemical etching, thereby forming at least one side edge extending, at least in places, transversely or perpendicularly to the main plane of extent of the substrate, and removing part of the substrate, part of the active zone and part of the semiconductor layer sequence at the side edge by wet-chemical etching, the active zone being designed to emit laser radiation. A laser chip is additionally specified.

公开(公告)号：US20230080542A1

公开(公告)日：2023-03-16

申请号：US17799284

申请日：2021-02-16

Applicant: ams-OSRAM International GmbH

Inventor： Muhammad ALI ,  Alfred LELL ,  Harald KOENIG

IPC: H01S5/40 ,  H01S5/0225 ,  H01S5/024 ,  G02B6/42 ,  H01S5/323 ,  H01S5/00

Abstract: In at least one embodiment, the radiation-emitting device comprises a laser bar for emitting laser radiation. The device further includes a waveguide having a core, a cladding, an entry face, and an exit face. The device may include a heat sink having a mounting side where the waveguide is applied thereon, the cladding being arranged at least above and below the core in relation to the mounting side. The device may be configured so that, during operation, the laser radiation impinges on the entry face of the waveguide and passes from there into the core. The core may include a conversion element configured to convert the laser radiation into secondary radiation. The waveguide may be configured to guide the laser radiation and/or the secondary radiation inside the core as far as the exit face by reflection at the interface between the cladding and the core.

公开(公告)号：US20250096518A1

公开(公告)日：2025-03-20

申请号：US18294469

申请日：2022-07-07

Applicant: ams-OSRAM International GmbH

Inventor： Christoph EICHLER ,  Alfred LELL ,  Sven GERHARD

IPC: H01S5/02 ,  H01S5/028 ,  H01S5/10 ,  H01S5/323

Abstract: In at least one embodiment, the semiconductor laser includes a semiconductor layer sequence for generating laser radiation and a transparent substrate. The semiconductor layer sequence has a first facet which is designed for emitting the laser radiation, and a second facet opposite the first facet. The substrate has a first lateral surface on the first facet and a second lateral surface on the second facet. The first lateral surface is orientated at least in part obliquely to the first facet and/or the second lateral surface is orientated at least in part obliquely to the second facet.