公开(公告)号：US20230420908A1

公开(公告)日：2023-12-28

申请号：US18251890

申请日：2021-10-14

Applicant: ams-OSRAM International GmbH

Inventor： Sven GERHARD

IPC: H01S5/02 ,  H01S5/22 ,  H01S5/10

CPC classification number: H01S5/0203 ,  H01S5/22 ,  H01S5/1014

Abstract: A method for producing a plurality of semiconductor lasers is specified, including the steps of: a) providing a substrate having a semiconductor layer sequence and having a plurality of component regions, each component region having at least one resonator region and being delimited perpendicular to the resonator region by singulation lines in the transverse direction and being delimited parallel to the resonator region by singulation lines in the longitudinal direction; b) forming recesses which overlap with the singulation lines in the transverse direction, using a dry-chemical etching method; c) wet-chemical etching of the side faces of the recesses for the purpose of forming resonator surfaces; and d) singulating the substrate along the singulation lines in the transverse direction and in the longitudinal direction. Additionally, a semiconductor laser is specified.

公开(公告)号：US20240275125A1

公开(公告)日：2024-08-15

申请号：US18563049

申请日：2022-05-24

Applicant: ams-OSRAM International GmbH

Inventor： Hubert HALBRITTER ,  Sven GERHARD ,  Bruno JENTZSCH ,  Tilman RÜGHEIMER ,  Christoph WALTER

IPC: H01S5/02255 ,  H01S5/02 ,  H01S5/02345 ,  H01S5/185 ,  H01S5/323 ,  H01S5/42

CPC classification number: H01S5/02255 ,  H01S5/0207 ,  H01S5/185 ,  H01S5/42 ,  H01S5/02345 ,  H01S5/32341

Abstract: The disclosed optoelectronic semiconductor chip includes a carrier, a semiconductor layer sequence on the carrier having at least one active zone for generating radiation, a layer of high optical refractive index on an output coupling facet of the semiconductor layer sequence for the output coupling of radiation, and a coating of low optical refractive index directly on an outer side of the layer of high optical refractive index for the total internal reflection of the radiation, wherein the semiconductor layer sequence is configured to guide the radiation in the active zone perpendicularly to a growth direction of the semiconductor layer sequence, and the layer of high optical refractive index is configured to deflect the radiation at the outer side parallel to the growth direction.

公开(公告)号：US20230197893A1

公开(公告)日：2023-06-22

申请号：US17924288

申请日：2021-05-10

Applicant: ams-OSRAM International GmbH

Inventor： Christoph EICHLER ,  Lars NÄHLE ,  Sven GERHARD

IPC: H01L33/10 ,  H01L33/00 ,  H01L33/62 ,  H01L25/075 ,  H01S5/00 ,  H01S5/02 ,  H01S5/40

CPC classification number: H01L33/10 ,  H01L33/005 ,  H01L33/62 ,  H01L25/0753 ,  H01S5/0071 ,  H01S5/0203 ,  H01S5/40 ,  H01L2933/0058

Abstract: The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

公开(公告)号：US20240405511A1

公开(公告)日：2024-12-05

申请号：US18695769

申请日：2022-09-06

Applicant: ams-OSRAM International GmbH

Inventor： Sven GERHARD ,  Alfred LELL ,  Christoph EICHLER

IPC: H01S5/10 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40

Abstract: The invention relates to an edge-emitting semiconductor laser diode, including the following features: an epitaxial semiconductor layer stack including an active one, in which during operation electromagnetic radiation is generated, wherein the epitaxial semiconductor layer stack has at least one facet which laterally delimits the epitaxial semiconductor layer stack, and the facet has at least one first partial surface and at least one second partial surface which have reflectivities differing from one another for the electromagnetic radiation generated in the active zone. The invention also relates to methods for producing a plurality of edge-emitting semiconductor laser diodes.

公开(公告)号：US20240372331A1

公开(公告)日：2024-11-07

申请号：US18686032

申请日：2022-08-26

Applicant: ams-OSRAM International GMBH

Inventor： Alfred LELL ,  Sven GERHARD ,  Christoph EICHLER

IPC: H01S5/20

Abstract: A method for producing at least one laser chip is specified, the method including the steps of growing a semiconductor layer sequence having an active zone on a substrate, removing part of the substrate, part of the active zone and part of the semiconductor layer sequence by dry-chemical etching, thereby forming at least one side edge extending, at least in places, transversely or perpendicularly to the main plane of extent of the substrate, and removing part of the substrate, part of the active zone and part of the semiconductor layer sequence at the side edge by wet-chemical etching, the active zone being designed to emit laser radiation. A laser chip is additionally specified.

公开(公告)号：US20240332901A1

公开(公告)日：2024-10-03

申请号：US18576609

申请日：2022-06-29

Applicant: AMS-OSRAM International GmbH

Inventor： Hubert HALBRITTER ,  Lutz HOEPPEL ,  Sven GERHARD

IPC: H01S5/183 ,  H01S5/32 ,  H01S5/323

CPC classification number: H01S5/18311 ,  H01S5/18347 ,  H01S5/18361 ,  H01S5/3211 ,  H01S5/32341

Abstract: The invention relates to a surface-emitting semiconductor laser, including a first semiconductor layer of a first conductivity type, the first semiconductor layer being structured forming a mesa, an active zone for generating electromagnetic radiation and a second semiconductor layer of a second conductivity type. The first semiconductor layer, the active zone and the second semiconductor layer are arranged on top of one another forming a semiconductor layer stack. The surface-emitting semiconductor laser further comprises a sheath layer which adjoins a lateral wall of the mesa.

公开(公告)号：US20250007237A1

公开(公告)日：2025-01-02

申请号：US18708730

申请日：2022-11-04

Applicant: ams-OSRAM International GmbH

Inventor： Alfred LELL ,  Christoph EICHLER ,  Sven GERHARD

IPC: H01S5/02255 ,  H01S5/22 ,  H01S5/40

Abstract: The invention relates to a component including a semiconductor body and at least one converter layer, wherein the semiconductor body includes at least one active region having an active zone, the active zone being designed to produce electromagnetic radiation. The semiconductor body has at least one vertical recess. A side wall of the recess is formed by a vertically extending facet of the active region, said facet being a radiation passage surface of the active region. The converter layer covers the recess in a top view or at least partly fills the recess. The invention also relates to a method for producing a component.

公开(公告)号：US20240047935A1

公开(公告)日：2024-02-08

申请号：US18546148

申请日：2022-01-27

Applicant: ams-OSRAM International GmbH

Inventor： Lars NÄHLE ,  Sven GERHARD

IPC: H01S5/02 ,  H01S5/22 ,  H01S5/10

CPC classification number: H01S5/0203 ,  H01S5/22 ,  H01S5/10

Abstract: The invention relates to a method for producing a plurality of semiconductor lasers, including the steps of: a) providing a substrate having a semiconductor layer sequence and having a plurality of component regions, each component region having at least one resonator region and being delimited perpendicular to the resonator region by singulation lines in the transverse direction and being delimited parallel to the resonator region by singulation lines in the longitudinal direction; b) forming recesses which overlap with the singulation lines in the transverse direction, using a dry-chemical etching method, wherein, when the substrate is seen from above, the recesses have in each case at least one transition, at which a first section of a side face of the recess and a second section of the side face of the recess form an angle of more than 180° in the recess; c) wet-chemical etching of the side faces of the recesses for the purpose of forming resonator surfaces; and d) singulating the substrate along the singulation lines in the transverse direction and in the longitudinal direction. Additionally, a semiconductor laser is specified.

公开(公告)号：US20230178958A1

公开(公告)日：2023-06-08

申请号：US17919601

申请日：2021-04-21

Applicant: ams-OSRAM International GmbH

Inventor： John BRÜCKNER ,  Sven GERHARD

IPC: H01S5/024 ,  H01S5/323 ,  H01S5/026 ,  H01S5/00

CPC classification number: H01S5/024 ,  H01S5/323 ,  H01S5/0261 ,  H01S5/0014 ,  H01S5/22

Abstract: The invention relates to a radiation-emitting semiconductor laser comprising—a semiconductor body comprising an active region which is designed to generate electromagnetic radiation, —a resonator which has a first end region and a second end region, and —a first sensor layer which is designed to measure the temperature of the semiconductor body, wherein the active region is located in the resonator in such a way that the electromagnetic radiation generated in the active region during operation is electromagnetic laser radiation, and —the first sensor layer is located in the first active end region of the resonator. The invention also relates to a method for operating a radiation-emitting semiconductor laser.