公开(公告)号：US09340414B2

公开(公告)日：2016-05-17

申请号：US14311034

申请日：2014-06-20

Applicant: mCube Inc.

Inventor： Shingo Yoneoka ,  Anthony F. Flannery, Jr.

IPC: B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00246 ,  B81B7/02 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0742 ,  G01L9/0042 ,  G01L9/0045 ,  G01L9/0054 ,  G01L9/0073 ,  G01L19/0084 ,  G01L19/143

Abstract: An integrated pressure sensing device and method of fabrication thereof are disclosed. The method can include providing a substrate member having a surface region and forming a CMOS IC layer overlying the substrate and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystalline silicon wafer can be bonded overlying the oxide surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and portions can be removed and filled with metal materials to form via structures. A pressure sensor device can be formed from the wafer, and can be co-fabricated with another sensor from the wafer. The pressure sensor and the other sensor can share a cavity pressure or have separate cavity pressures.

Abstract translation: 公开了一种集成的压力感测装置及其制造方法。 该方法可以包括提供具有表面区域的衬底构件，并且形成覆盖衬底的CMOS IC层并形成覆盖在CMOS IC层上的氧化物层。 可以去除氧化物层的一部分以形成空腔区域。 可以将单晶硅晶片粘合在氧化物表面区域上以密封空腔区域。 接合工艺可以包括熔接或共熔粘合工艺。 可以将晶片减薄到所需的厚度，并且可以去除部分并用金属材料填充以形成通孔结构。 压力传感器装置可以由晶片形成，并可与来自晶片的另一传感器共同制造。 压力传感器和另一个传感器可以共享腔体压力或具有单独的腔体压力。