公开(公告)号：US09725304B2

公开(公告)日：2017-08-08

申请号：US14887631

申请日：2015-10-20

Applicant: mCube Inc.

Inventor： Wenhua Zhang ,  Shingo Yoneoka

IPC: B81B7/02 ,  B81C1/00 ,  B81B7/00 ,  H01L21/56 ,  H01L41/113

CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0292 ,  B81C1/00293 ,  B81C1/00333 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0154 ,  H01L21/56 ,  H01L41/1132

Abstract: A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.

公开(公告)号：US20160039666A1

公开(公告)日：2016-02-11

申请号：US14887631

申请日：2015-10-20

Applicant: mCube Inc.

Inventor： WENHUA ZHANG ,  Shingo Yoneoka

IPC: B81B7/02 ,  B81B7/00

CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0292 ,  B81C1/00293 ,  B81C1/00333 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0154 ,  H01L21/56 ,  H01L41/1132

Abstract: A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.

Abstract translation: 具有多个MEMS（微电子机械系统）器件的半导体器件包括具有第一MEMS器件和第二MEMS器件的半导体衬底，以及具有形成第一腔和第二腔的顶部和侧壁的封装衬底。 封装衬底在侧壁处结合到半导体衬底以将第一MEMS器件封装在第一腔中并将第二MEMS器件封装在第二腔中。 第二腔包括在封装衬底的侧壁中的与封装衬底和半导体衬底之间的界面相邻的凹陷区域处的至少一个存取通道。 通道被薄膜覆盖。 第一空腔处于第一大气压，第二空腔处于第二大气压。 第二空气压力与第一气压不同。

公开(公告)号：US09075079B2

公开(公告)日：2015-07-07

申请号：US14297337

申请日：2014-06-05

Applicant: mCube Inc.

Inventor： Shingo Yoneoka ,  Sudheer Sridharamurthy ,  Wenhua Zhang ,  Te-Hsi Terrence Lee

IPC: G01P15/13 ,  G01C19/5762 ,  G01C19/5719 ,  G01P15/125 ,  G01P15/08 ,  G01C19/5712

CPC classification number: G01P15/131 ,  G01C19/5712 ,  G01C19/5719 ,  G01C19/5762 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/084 ,  G01P2015/0865

Abstract: An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

Abstract translation: 集成的MEMS惯性传感器装置。 该器件包括覆盖CMOS衬底的MEMS惯性传感器。 MEMS惯性传感器包括经由至少一个驱动弹簧耦合到表面区域的驱动框架，经由至少一个感测弹簧耦合到驱动框架的感测质量块和设置在感测质量块下方的感测电极。 该装置还包括设置在感测电极附近的至少一对正交消除电极，其中每对包括N电极和P电极。

公开(公告)号：US10046964B2

公开(公告)日：2018-08-14

申请号：US14302385

申请日：2014-06-11

Applicant: mCube Inc.

Inventor： Te-Hsi “Terrence” Lee ,  Sudheer S. Sridharamurthy ,  Shingo Yoneoka ,  Wenhua Zhang

IPC: B81B7/00 ,  B81C1/00 ,  B81B3/00

Abstract: A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.

公开(公告)号：US09291638B2

公开(公告)日：2016-03-22

申请号：US13745723

申请日：2013-01-18

Applicant: mCube Inc.

Inventor： Raymond Merrill, Jr. ,  Anthony Flannery, Jr. ,  Shingo Yoneoka

IPC: G01P21/00 ,  G01P15/125 ,  G01P15/08

CPC classification number: G01P15/125 ,  G01P15/08 ,  G01P15/0802 ,  G01P21/00 ,  G01P2015/0831

Abstract: A method for providing acceleration data with reduced substrate-displacement bias includes receiving in an accelerometer an external acceleration, determining the acceleration data with reduced substrate displacement bias in a compensation portion in response to a first and a second displacement indicators from a MEMS transducer, and, in response to substrate compensation factors from a MEMS compensation portion, outputting the acceleration data with reduced substrate displacement bias, wherein the first displacement indicator and the second displacement indicator are determined by the MEMS transducer relative to a substrate in response to the external acceleration and to a substrate displacement, and wherein the substrate compensation factors are determined by the MEMS compensation portion relative to the substrate in response to the substrate displacement.

Abstract translation: 用于提供具有减小的衬底位移偏置的加速度数据的方法包括在加速度计中接收外部加速度，响应于来自MEMS换能器的第一和第二位移指示器，在补偿部分中减小衬底位移偏置来确定加速度数据，以及 响应于来自MEMS补偿部分的衬底补偿因子，以减小的衬底位移偏压输出加速度数据，其中第一位移指示器和第二位移指示器响应于外部加速度由MEMS换能器相对于衬底确定，并且 到衬底位移，并且其中衬底补偿因子响应于衬底位移由MEMS补偿部分相对于衬底确定。

公开(公告)号：US10183860B2

公开(公告)日：2019-01-22

申请号：US14887622

申请日：2015-10-20

Applicant: mCube Inc.

Inventor： Wenhua Zhang ,  Shingo Yoneoka

IPC: B81B7/02 ,  B81C1/00 ,  B81B7/00 ,  H01L21/56 ,  H01L41/113

Abstract: A method for fabricating a multiple MEMS device includes providing a semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel. The first MEMS is encapsulated within the first cavity and the second MEMS device is encapsulated within the second cavity. These devices is encapsulated within a first encapsulation environment at a first air pressure, and encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity is then subjected to a second encapsulating environment at a second air pressure via the channel of the second cavity.

公开(公告)号：US10132630B2

公开(公告)日：2018-11-20

申请号：US14162718

申请日：2014-01-23

Applicant: mCube Inc.

Inventor： Terrence Lee ,  Wenhua Zhang ,  Sudheer Sridharamurthy ,  Shingo Yoneoka

IPC: G01C19/5783 ,  G01C19/56 ,  G01P1/00 ,  B81B7/00 ,  G01P15/18 ,  G01P15/02 ,  G01P15/08

Abstract: A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially configured with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

公开(公告)号：US10036635B2

公开(公告)日：2018-07-31

申请号：US14163789

申请日：2014-01-24

Applicant: mCube Inc.

Inventor： Wenhua Zhang ,  Sudheer Sridharamurthy ,  Shingo Yoneoka ,  Terrence Lee

IPC: B81B3/00 ,  G01C19/574

CPC classification number: G01C19/574

Abstract: A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

公开(公告)号：US20140370638A1

公开(公告)日：2014-12-18

申请号：US14302385

申请日：2014-06-11

Applicant: mCube Inc.

Inventor： TE-HSI "TERRENCE" LEE ,  Sudheer S. Sridharamurthy ,  Shingo Yoneoka ,  Wenhua Zhang

IPC: B81C1/00

CPC classification number: B81B7/0022 ,  B81B3/0086 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/11 ,  B81C1/00246 ,  B81C1/0038 ,  B81C1/00531 ,  B81C1/00801 ,  B81C2201/053

Abstract: A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.

Abstract translation: 一种用于制造集成MEMS-CMOS器件的方法。 该方法可以包括提供具有表面区域的衬底构件，并形成具有覆盖在表面区域上的至少一个CMOS器件的CMOS IC层。 可以形成覆盖CMOS IC层的底部隔离层，并且可以形成覆盖在底部隔离层的一部分上的屏蔽层和顶部隔离层。 底部隔离层可以包括顶部隔离层和屏蔽层之间的隔离区域。 覆盖顶部隔离层，屏蔽层和底部隔离层的MEMS层，并且可被蚀刻以形成具有至少一个可移动结构和至少一个锚定结构的至少一个MEMS结构。

公开(公告)号：US09340414B2

公开(公告)日：2016-05-17

申请号：US14311034

申请日：2014-06-20

Applicant: mCube Inc.

Inventor： Shingo Yoneoka ,  Anthony F. Flannery, Jr.

IPC: B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00246 ,  B81B7/02 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0742 ,  G01L9/0042 ,  G01L9/0045 ,  G01L9/0054 ,  G01L9/0073 ,  G01L19/0084 ,  G01L19/143

Abstract: An integrated pressure sensing device and method of fabrication thereof are disclosed. The method can include providing a substrate member having a surface region and forming a CMOS IC layer overlying the substrate and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystalline silicon wafer can be bonded overlying the oxide surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and portions can be removed and filled with metal materials to form via structures. A pressure sensor device can be formed from the wafer, and can be co-fabricated with another sensor from the wafer. The pressure sensor and the other sensor can share a cavity pressure or have separate cavity pressures.

Abstract translation: 公开了一种集成的压力感测装置及其制造方法。 该方法可以包括提供具有表面区域的衬底构件，并且形成覆盖衬底的CMOS IC层并形成覆盖在CMOS IC层上的氧化物层。 可以去除氧化物层的一部分以形成空腔区域。 可以将单晶硅晶片粘合在氧化物表面区域上以密封空腔区域。 接合工艺可以包括熔接或共熔粘合工艺。 可以将晶片减薄到所需的厚度，并且可以去除部分并用金属材料填充以形成通孔结构。 压力传感器装置可以由晶片形成，并可与来自晶片的另一传感器共同制造。 压力传感器和另一个传感器可以共享腔体压力或具有单独的腔体压力。