公开(公告)号：US06204595B1

公开(公告)日：2001-03-20

申请号：US08500282

申请日：1995-07-10

Applicant: Steven Falabella

Inventor： Steven Falabella

IPC: H01J2110

CPC classification number: H01J1/304 ,  H01J2201/30457

Abstract: An electron emitter comprising a textured silicon wafer overcoated with a thin (200 Å) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

Abstract translation: 已经证明使用这种发射体与未涂覆的或金刚石相比，包括用薄（200）氮掺杂的非晶金刚石（a：DN）层覆盖的纹理化硅晶片的电子发射器 涂覆的发射体，其中发射是接近60伏/微米的场。 硅/氮掺杂的非晶金刚石（Si / a：D-N）发射极可以通过使用经过滤的阴极弧系统在氮气气氛中用无定形金刚石（a：D）覆盖纹理硅晶片来制备。 Si / a：D-N发射极的增强性能降低了场致发射显示实用的点所需的电压。 因此，该发射极可用于例如平板发射显示器（FED）和冷阴极真空电子器件

公开(公告)号：US06169356A

公开(公告)日：2001-01-02

申请号：US08264497

申请日：1994-06-23

Applicant: Toshikazu Ohnishi ,  Masato Yamanobe ,  Ichiro Nomura ,  Hidetoshi Suzuki ,  Yoshikazu Banno ,  Takeo Ono ,  Masanori Mitome

Inventor： Toshikazu Ohnishi ,  Masato Yamanobe ,  Ichiro Nomura ,  Hidetoshi Suzuki ,  Yoshikazu Banno ,  Takeo Ono ,  Masanori Mitome

IPC: H01J2110

CPC classification number: H01J31/127 ,  H01J1/316 ,  H01J9/027 ,  H01J2201/3165 ,  H01J2329/0489

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract translation: 电子发射器件包括一对相对设置的电极和布置在电极之间并包括高电阻区域的导电膜。 高电阻区具有以碳为主要成分的沉积物。 电子发射器件可用于平板型图像形成装置的电子源。