公开(公告)号：US06949475B2

公开(公告)日：2005-09-27

申请号：US10694035

申请日：2003-10-27

Applicant: Jae Suk Lee

Inventor： Jae Suk Lee

IPC: H01L21/3205 ,  H01L23/31 ,  H01L21/31 ,  H01L21/44 ,  H01L21/469

CPC classification number: H01L23/3192 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices and methods of fabricating semiconductor devices are disclosed. A disclosed semiconductor device comprises: a semiconductor substrate; an uppermost metal interconnect formed on the semiconductor substrate; an oxide layer formed on the substrate and the uppermost metal interconnect; an aluminum layer formed on the oxide layer; and a stress-relief layer formed on the aluminum layer to thereby prevent cracking of the passivation layer during a subsequent packaging process, to increase reliability of the passivation layer, and to prevent degradation of properties of the semiconductor device.

Abstract translation: 公开了制造半导体器件的半导体器件和方法。 所公开的半导体器件包括：半导体衬底; 形成在半导体衬底上的最上面的金属互连; 形成在基板上的氧化物层和最上面的金属互连; 形成在所述氧化物层上的铝层; 以及形成在铝层上的应力消除层，从而防止在随后的封装过程中钝化层的破裂，以增加钝化层的可靠性，并防止半导体器件的性能劣化。

公开(公告)号：US20050180044A1

公开(公告)日：2005-08-18

申请号：US10986024

申请日：2004-11-12

Applicant: Jae-suk Lee

Inventor： Jae-suk Lee

IPC: G11B17/00 ,  G11B25/04 ,  G11B33/08

CPC classification number: G11B25/043 ,  G11B33/08

Abstract: A damping structure of a hard disk drive. The damping structure includes: a damping plate arranged spaced apart from an upper surface of the cover member, such that an air gap is formed between the cover member and the damping plate; and a damping member arranged between an edge of the cover member and an edge of the damping plate. The damping plate includes a stepped portion which is inwardly formed at a portion spaced apart from the edge of the damping plate by a predetermined distance, and a bent portion which is formed at an edge of the damping plate and smoothly bent toward the cover member. In such a damping structure, an impact that is applied to the cover member from an outside can be reduced much more through the damping plate and the damping member.

Abstract translation: 硬盘驱动器的阻尼结构。 阻尼结构包括：阻挡板，其与盖构件的上表面间隔开设置，使得在盖构件和阻尼板之间形成气隙; 以及设置在所述盖构件的边缘和所述阻尼板的边缘之间的阻尼构件。 阻尼板包括台阶部分，其在与阻尼板的边缘间隔开预定距离的部分处向内形成，弯曲部分形成在阻尼板的边缘处并平滑地朝向盖部件弯曲。 在这样的阻尼结构中，通过阻尼板和阻尼构件能够将从外部施加到盖构件的冲击减少得更多。

公开(公告)号：US06716735B2

公开(公告)日：2004-04-06

申请号：US10327858

申请日：2002-12-26

Applicant: Jae Suk Lee ,  Young Sung Lee

Inventor： Jae Suk Lee ,  Young Sung Lee

IPC: H01L213205

CPC classification number: H01L21/76885

Abstract: After first metal lines and a first inter-metal dielectric are formed on a semiconductor substrate, top surfaces thereof are planarized to construct a flat plane. Then, second metal lines each being vertically aligned with a corresponding first metal line are formed on the flat plane, so that integral metal lines of a high aspect ratio are constructed. Gaps formed by the second metal lines are filled with a second inter-metal dielectric, which is joined with the first inter-metal dielectric to construct an integral inter-metal dielectric.

Abstract translation: 在第一金属线和第一金属互连电介质形成在半导体衬底上之后，其顶表面被平面化以构成平面。 然后，在平面上形成各自与对应的第一金属线垂直取向的第二金属线，从而构成高纵横比的整体金属线。 由第二金属线形成的间隙填充有第二金属间电介质，其与第一金属间电介质连接以构成一体的金属间电介质。

公开(公告)号：US06649488B2

公开(公告)日：2003-11-18

申请号：US10304696

申请日：2002-11-27

Applicant: Jae Suk Lee ,  Dae Heok Kwon

Inventor： Jae Suk Lee ,  Dae Heok Kwon

IPC: H01L2176

CPC classification number: H01L21/76224

Abstract: After a trench is formed into a substrate, a polysilicon layer is formed on sidewalls and a bottom of the trench. A thermal oxidation is performed on the polysilicon layer such that a polysilicon oxide layer is formed thereon. Then, a portion of the polysilicon oxide layer is removed such that the polysilicon layer is exposed on the bottom of the trench while the sidewalls of the trench are still covered by the polysilicon oxide layer. A TEOS-ozone oxide layer is deposited on the substrate to fill the trench. Since the bottom of the trench has a better condition for the deposition of TEOS-ozone oxide layer than that of the sidewalls, a gap fill quality can be enhanced.

Abstract translation: 在沟槽形成衬底之后，在沟槽的侧壁和底部上形成多晶硅层。 在多晶硅层上进行热氧化，使得在其上形成多晶硅氧化物层。 然后，去除多晶硅氧化物层的一部分，使得多晶硅层暴露在沟槽的底部，同时沟槽的侧壁仍然被多晶硅氧化物层覆盖。 TEOS-臭氧氧化物层沉积在衬底上以填充沟槽。 由于沟槽的底部具有比侧壁沉积TEOS-臭氧氧化物层更好的条件，所以可以提高间隙填充质量。