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公开(公告)号:US20050180203A1
公开(公告)日:2005-08-18
申请号:US10780171
申请日:2004-02-16
Applicant: Wen-Chin Lin , Denny Tang , Li-Shyue Lai
Inventor: Wen-Chin Lin , Denny Tang , Li-Shyue Lai
CPC classification number: G11C11/16 , G11C2213/72 , G11C2213/74
Abstract: In one example, an MRAM memory array includes a plurality of word lines, a plurality of bit lines crossing the word lines, and a plurality of first and second diodes, and magnetic tunnel junction memories. Each first diode includes a cathode, and an anode coupled to each bit line. Each second diode includes an anode, and a cathode coupled to each word line. The magnetic tunnel junction memories include a pinned layer, a free layer, and a non-magnetic layer. The non-magnetic layer is located between the pinned layer and the free layer. Each diode is positioned at crossing points of the bit lines and the word lines and connected between the first diode at the corresponding crossing bit line and the second diode at the corresponding crossing word line.
Abstract translation: 在一个示例中,MRAM存储器阵列包括多个字线,与字线交叉的多个位线,以及多个第一和第二二极管以及磁性隧道结存储器。 每个第一二极管包括阴极和耦合到每个位线的阳极。 每个第二二极管包括阳极和耦合到每个字线的阴极。 磁性隧道结存储器包括钉扎层,自由层和非磁性层。 非磁性层位于被钉扎层和自由层之间。 每个二极管位于位线和字线的交叉点处,并连接在相应交叉位线处的第一二极管和相应交叉字线处的第二二极管之间。