公开(公告)号：US5804884A

公开(公告)日：1998-09-08

申请号：US492597

申请日：1995-06-20

申请人： Claudio Diazzi ,  Bruno Murari ,  Ubaldo Mastromatteo ,  Claudio Contiero

发明人： Claudio Diazzi ,  Bruno Murari ,  Ubaldo Mastromatteo ,  Claudio Contiero

IPC分类号： H01L21/76 ,  H01L21/822 ,  H01L23/31 ,  H01L23/58 ,  H01L27/04 ,  H01L23/28 ,  H01L23/29

CPC分类号： H01L23/585 ,  H01L23/315 ,  H01L2924/0002

摘要： The resin sealing layer enclosing the device is biased to a low voltage by means of an anchoring structure formed close to high-voltage contact pads. The anchoring structure is formed by a metal region deposited on the surface of the device and contacting the resin layer, and by a deep region extending from the surface of the device, beneath the metal region, to the substrate. The electrical field in the resin layer is confined between the high-voltage pads and the anchoring structure and prevented from generating polarity inversions in the semiconductor material at the low-voltage contact pads or any other points at which the resin layer contacts the body of semiconductor material.

摘要翻译： 封闭该器件的树脂密封层通过靠近高压接触焊盘形成的锚定结构而被偏压到低电压。 锚定结构由沉积在器件表面上的金属区域形成，并且与金属区域下方的树脂层和从器件表面延伸的深部区域接触。 树脂层中的电场被限制在高压焊盘和锚固结构之间，并且防止在低压接触焊盘或树脂层与半导体本体接触的任何其它点处产生半导体材料中的极性反转 材料。