公开(公告)号：US20180012791A1

公开(公告)日：2018-01-11

申请号：US15202867

申请日：2016-07-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Zhiguo Sun ,  Qiang Fang ,  Suraj K. Patil ,  Jiehui Shu

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/7682 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1063

Abstract: Interconnect structures and methods of forming such interconnect structures. A spacer is formed inside an opening in a dielectric layer. After the spacer is formed, a conductive plug is formed inside the opening in the dielectric layer. After the conductive plug is formed, the spacer is removed to define an air gap located inside the opening in the dielectric layer. The air gap is located between the conductive plug and the opening in the dielectric layer.