公开(公告)号：US08711628B2

公开(公告)日：2014-04-29

申请号：US13889615

申请日：2013-05-08

Applicant: Micron Technology, Inc.

Inventor： Ramin Ghodsi

IPC: G11C11/00

CPC classification number: G11C16/0408 ,  G11C11/005 ,  G11C13/0002 ,  G11C16/10 ,  G11C16/26

Abstract: Memory devices and methods of operating memory devices are provided, such as those that involve a memory architecture that replaces typical static and/or dynamic components with emerging non-volatile memory (NV) elements. The emerging NV memory elements can replace conventional latches, can serve as a high speed interface between a flash memory array and external devices and can also be used as high performance cache memory for a flash memory array.

Abstract translation: 提供了操作存储器件的存储器件和方法，例如涉及利用新兴非易失性存储器（NV）元件代替典型的静态和/或动态组件的存储器架构的存储器件和方法。 新兴的NV存储器元件可以替代传统的锁存器，可以用作闪存阵列和外部设备之间的高速接口，并且还可以用作闪存阵列的高性能高速缓冲存储器。