公开(公告)号：US5871826A

公开(公告)日：1999-02-16

申请号：US655549

申请日：1996-05-30

申请人： Ping Mei ,  Rene A. Lujan ,  James B. Boyce

发明人： Ping Mei ,  Rene A. Lujan ,  James B. Boyce

IPC分类号： H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/225 ,  H01L21/268 ,  H01L21/30 ,  H01L21/336 ,  H01L21/8238 ,  B05D3/06

CPC分类号： H01L29/66757 ,  H01L21/22 ,  H01L21/2225 ,  H01L21/223 ,  H01L21/2233 ,  H01L21/2252 ,  H01L21/3003 ,  H01L21/823871 ,  H01L21/2026

摘要： This invention relates to a method of altering the electrical characteristics of a material through a laser ablation process. It can achieve high doping levels and shallow junctions at low temperatures, which are desirable in the fabrication of thin film transistors.

摘要翻译： 本发明涉及通过激光烧蚀工艺改变材料的电特性的方法。 它可以在低温下实现高掺杂水平和浅结，这在薄膜晶体管的制造中是期望的。

公开(公告)号：US5366926A

公开(公告)日：1994-11-22

申请号：US073022

申请日：1993-06-07

申请人： Ping Mei ,  James B. Boyce ,  Richard I. Johnson ,  Michael G. Hack ,  Rene A. Lujan

发明人： Ping Mei ,  James B. Boyce ,  Richard I. Johnson ,  Michael G. Hack ,  Rene A. Lujan

IPC分类号： H01L21/20 ,  H01L21/26

CPC分类号： H01L21/2026 ,  Y10S148/09 ,  Y10S148/093

摘要： A low temperature process for dehydrogenating amorphous silicon using lasers. Dehydrogenation occurs by irradiating one or more areas of a hydrogenated amorphous silicon layer with laser beam pulses at a relatively low energy density. After the multiple laser pulse irradiation at a relatively low energy density, the laser energy density is increased and multiple irradiation at a higher energy density is performed. If after the multiple irradiation at the higher energy density the amorphous silicon hydrogen content is still too high, dehydrogenation proceeds by multiple irradiations at a yet higher energy density. The irradiation at the various energy densities can result in the formation of polysilicon due to melting of the amorphous silicon layer. As irradiation may be selectively applied to the amorphous silicon, an integral amorphous silicon-polysilicon structure may be formed.

摘要翻译： 使用激光使非晶硅脱氢的低温工艺。 通过以相对低的能量密度用激光束脉冲照射氢化非晶硅层的一个或多个区域来进行脱氢。 在相对低能量密度的多次激光脉冲照射之后，激光能量密度增加，并且以更高的能量密度进行多次照射。 如果在较高能量密度下的多次照射之后，非晶硅氢含量仍然太高，则以更高的能量密度进行多次照射进行脱氢。 在各种能量密度下的照射可导致由于非晶硅层的熔化而形成多晶硅。 当照射可以选择性地施加到非晶硅时，可以形成整体的非晶硅 - 多晶硅结构。