公开(公告)号：US11152493B2

公开(公告)日：2021-10-19

申请号：US14540184

申请日：2014-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Miyuki Hosoba ,  Kosei Noda ,  Hiroki Ohara ,  Toshinari Sasaki ,  Junichiro Sakata

IPC: H01L21/00 ,  H01L21/477 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

Abstract: A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

公开(公告)号：US11094717B2

公开(公告)日：2021-08-17

申请号：US16879853

申请日：2020-05-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toshinari Sasaki ,  Junichiro Sakata ,  Masashi Tsubuku

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L27/32

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

公开(公告)号：US10854640B2

公开(公告)日：2020-12-01

申请号：US16672988

申请日：2019-11-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

IPC: H01L27/14 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1368 ,  G02F1/1343

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

公开(公告)号：US10796908B2

公开(公告)日：2020-10-06

申请号：US16110396

申请日：2018-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

Abstract: An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.

公开(公告)号：US10714503B2

公开(公告)日：2020-07-14

申请号：US16270079

申请日：2019-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

公开(公告)号：US10692894B2

公开(公告)日：2020-06-23

申请号：US16161573

申请日：2018-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi Ito ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Junichiro Sakata

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/26 ,  H01L29/45 ,  G09G3/20 ,  H01L29/24

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

公开(公告)号：US10461098B2

公开(公告)日：2019-10-29

申请号：US14986156

申请日：2015-12-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Tatsuya Takahashi

IPC: H01L27/12 ,  G02F1/1368 ,  H01L29/45 ,  H01L29/786 ,  H01L21/02

Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

公开(公告)号：US10439050B2

公开(公告)日：2019-10-08

申请号：US15461767

申请日：2017-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/417

Abstract: A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.

公开(公告)号：US10332743B2

公开(公告)日：2019-06-25

申请号：US15665689

申请日：2017-08-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L21/84 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.

公开(公告)号：US10283627B2

公开(公告)日：2019-05-07

申请号：US14328060

申请日：2014-07-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Hiroki Ohara ,  Junichiro Sakata

IPC: H01L29/66 ,  H01L21/00 ,  H01L29/45 ,  H01L29/786 ,  H01L21/02 ,  H01L21/306

Abstract: An object is to provide a highly reliable semiconductor device including a thin film transistor having stable electric characteristics. In addition, another object is to manufacture a highly reliable semiconductor device at low cost with high productivity. In a method for manufacturing a semiconductor device including a thin film transistor including an oxide semiconductor layer as a channel formation region, the oxide semiconductor layer is heated under a nitrogen atmosphere to lower its resistance, thereby forming a low-resistance oxide semiconductor layer. Further, resistance of a region of the low-resistance oxide semiconductor layer, which is overlapped with a gate electrode layer, is selectively increased, thereby forming a high-resistance oxide semiconductor layer. Resistance of the oxide semiconductor layer is increased by forming a silicon oxide film in contact with the oxide semiconductor layer by a sputtering method.