公开(公告)号：US20140120660A1

公开(公告)日：2014-05-01

申请号：US14148906

申请日：2014-01-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Kosei Noda ,  Toshinari Sasaki

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02367 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869

Abstract: An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region.

Abstract translation: 使用释放大量氧的绝缘层作为与氧化物半导体层的沟道区域接触的绝缘层，并且使用释放少量氧的绝缘层作为与源极接触的绝缘层 区域和氧化物半导体层的漏极区域。 通过从释放大量氧的绝缘层释放氧气，可以减少沟道区域中的氧缺乏以及绝缘层和沟道区域之间的界面态密度，从而可以降低电子变化小的高度可靠的半导体器件 特性可以制造。 源极区域和漏极区域设置成与释放少量氧气的绝缘层接触，从而抑制源极区域和漏极区域的电阻的增加。