公开(公告)号：US20100110585A1

公开(公告)日：2010-05-06

申请号：US12290720

申请日：2008-11-03

申请人： Kenichi Takano ,  Joe Smyth ,  Moris Dovek

发明人： Kenichi Takano ,  Joe Smyth ,  Moris Dovek

IPC分类号： G11B5/10

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/315 ,  G11B5/3163 ,  G11B5/3967

摘要： Insertion of a two part trailing shield between the write gap and the upper return pole of a magnetic write head reduces the sensitivity of the latter to increases in the current driving the field coils (beyond the required minimum). A key feature is careful control of the distance between the upper component of the write shield and the main pole. A process for manufacturing the structure is outlined.

摘要翻译： 在写入间隙和磁性写入头的上部返回极之间插入两个部分的尾部屏蔽可以降低磁体的灵敏度，以增加驱动励磁线圈的电流（超出所需的最小值）。 一个关键的特征是仔细控制写屏蔽的上部组件和主极之间的距离。 概述了制造结构的过程。

公开(公告)号：US07283337B2

公开(公告)日：2007-10-16

申请号：US11074270

申请日：2005-03-04

申请人： Masanori Sakai ,  Kunliang Zhang ,  Kenichi Takano ,  Chyu-Jiuh Torng ,  Yunfei Li ,  Po-Kang Wang

发明人： Masanori Sakai ,  Kunliang Zhang ,  Kenichi Takano ,  Chyu-Jiuh Torng ,  Yunfei Li ,  Po-Kang Wang

IPC分类号： G11B5/127

CPC分类号： G11B5/3932

摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

摘要翻译： 用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。 研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。 主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。 另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。 与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。 此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

公开(公告)号：US20070028442A1

公开(公告)日：2007-02-08

申请号：US11546146

申请日：2006-10-11

申请人： Kenichi Takano

发明人： Kenichi Takano

IPC分类号： G11B5/127

CPC分类号： G11B5/3912 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49046

摘要： It is necessary to stabilize the free layer of GMR or TMR devices by providing a longitudinal bias field. As read tracks become very narrow, this field can drastically reduce the strength of the output signal. This problem has been overcome by adding an additional, compensatory, bias layer. This layer is permanently magnetized in the same direction as the main bias magnet. Through control of the magnetization strength and location of the compensatory bias layer, cancellation of the field induced in the free layer, by the main bias layers, is achieved. A process for manufacturing the devices is also described.

摘要翻译： 需要通过提供纵向偏置场来稳定GMR或TMR器件的自由层。 随着读取轨迹变得非常窄，该领域可以显着降低输出信号的强度。 通过添加额外的补偿性偏置层已经克服了这个问题。 该层在与主偏置磁铁相同的方向上永久磁化。 通过控制补偿偏置层的磁化强度和位置，实现由主偏置层在自由层中感应的场的消除。 还描述了用于制造器件的工艺。

公开(公告)号：US07061717B2

公开(公告)日：2006-06-13

申请号：US10443362

申请日：2003-05-22

申请人： Kenichi Takano

发明人： Kenichi Takano

IPC分类号： G11B5/127

CPC分类号： G11B5/3109

摘要： In current high density magnetic memory systems a large write current is used, giving its waveform a large overshoot. This often brings about severe excess saturation of the media so the recorded transition quality degrades. This problem has been overcome by constricting a portion of the write head yoke. This effectively places a flux control valve ahead of the write pole tip which reduces the sensitivity of the write field to the write current as well as to other parameters, thereby enabling the write field to rise very rapidly without an excessive increase in the write width and reducing its sensitivity to the write current at low current values.

摘要翻译： 在当前的高密度磁存储器系统中，使用大的写入电流，使其波形具有大的过冲。 这通常会导致媒体严重过度饱和，因此记录的转换质量下降。 通过收缩写磁头磁轭的一部分来克服这个问题。 这有效地将磁通控制阀放置在写入极尖之前，这降低了写入场对写入电流的灵敏度以及其他参数，从而使得写入场能够非常快地上升，而不会使写入宽度过度增加， 在低电流值下降低对写入电流的灵敏度。

公开(公告)号：US20050190492A1

公开(公告)日：2005-09-01

申请号：US10789076

申请日：2004-02-27

申请人： Kenichi Takano

发明人： Kenichi Takano

IPC分类号： G11B5/127

CPC分类号： G11B5/1278

摘要： To generate a high data transfer rate from a magnetic write head, a faster flux rise time is needed. This often brings about severe excess saturation of the head and, as a result, adjacent track erasures often occur. This problem has been overcome by indenting P1 away from the ABS so that there is a narrowing of P1 near, but not all the way to, the write gap. This causes the excess flux associated with high write currents to be diverted into P2 instead the P1 shoulder.

摘要翻译： 为了从磁写头产生高数据传输速率，需要更快的通量上升时间。 这通常会导致头部的严重过度饱和，因此经常发生相邻的轨迹擦除。 这个问题已经通过将P 1从ABS压出而被克服，使得P 1在写入间隙附近有一个变窄，但并不是一直到达。 这导致与高写入电流相关联的过量磁通转向P 2而不是P 1肩。