公开(公告)号：US06548613B2

公开(公告)日：2003-04-15

申请号：US09747364

申请日：2000-12-22

Applicant: Min-Ho Jung ,  Sung-Eun Hong ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Ho Baik

Inventor： Min-Ho Jung ,  Sung-Eun Hong ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Ho Baik

IPC: C08F22018

CPC classification number: C08F220/34 ,  G03F7/091

Abstract: The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm), ArF (193 nm), or F2 (157 nm) laser as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield, of such semiconductor devices.

Abstract translation: 本发明提供可用作抗反射涂层（ARC）聚合物的聚合物，包含其的ARC组合物，其制备方法及其使用方法。 本发明的聚合物在亚微光刻工艺中特别有用，例如使用KrF（248nm），ArF（193nm）或F2（157nm）激光作为光源。 本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。 因此，本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。 本发明的ARC还显着地减少或消除驻波效应和反射性切口。 因此，本发明的聚合物可用于制备适合于制造64M，256M，1G，4G和16G DRAM半导体器件的稳定超细晶格。 此外，本发明的ARC显着提高了这种半导体器件的生产成本。

公开(公告)号：US06391518B1

公开(公告)日：2002-05-21

申请号：US09360402

申请日：1999-07-23

Applicant: Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: C08F232/08 ,  G03F7/0382 ,  G03F7/0395

Abstract: The present invention provides a photoresist monomer represented by the following formula 2; a photoresist copolymer represented by the following formula 100; and a photoresist composition containing the same. wherein, R1 and R2 are independently —COOH or —R—COOH; and R is a substituted or unsubstituted (C1-C10) alkyl. wherein, R1 and R2 are independently —COOH or —R—COOH ; R is a substituted or unsubstituted (C1-C10) alkyl; R3 is —COOR* or —R′COOR*; R* is an acid labile group; R′ is a substituted or unsubstituted (C1-C10) alkyl; R4 is H or R3; R5 is a substituted or unsubstituted (C1-C10) alkyl; and a:b:c is the polymerization ratio of the comonomer.

Abstract translation: 本发明提供由下式2表示的光致抗蚀剂单体; 由下式100表示​​的光致抗蚀剂共聚物; 和含有它们的光致抗蚀剂组合物，其中R 1和R 2独立地是-COOH或-R-COOH; 并且R是取代或未取代的（C1-C10）烷基。其中R1和R2独立地是-COOH或-R-COOH; R是取代或未取代的（C 1 -C 10）烷基; R3是-COOR *或-R'COOR *; R *是酸不稳定组; R'是取代或未取代的（C 1 -C 10）烷基; R4是H或R3; R5是取代或未取代的（C1-C10）烷基; 和a：b：c是共聚单体的聚合比。

公开(公告)号：US06376632B1

公开(公告)日：2002-04-23

申请号：US09850177

申请日：2001-05-07

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

IPC: C08F13204

CPC classification number: C07C59/46 ,  C07C57/26 ,  C07C59/80 ,  C07C69/608 ,  C07C69/732 ,  C07C69/738 ,  C08G61/08 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106

Abstract: The present invention relates to a carboxyl-containing alicyclic compound represented by Chemical Formula 1: [formula 1] wherein, R1 and R2, which may be identical to or different from each other, represent hydrogen or a tert-butyl group; X represents hydrogen, hydroxy or oxygen; and n represents a number from 1 to 3. Compounds of the present invention are useful as monomers in a photoresist resin, and in a process for preparing the same.

Abstract translation: 本发明涉及由化学式1表示的含羧基脂环族化合物：[式1]其中R1和R2可以相同或不同，表示氢或叔丁基; X表示氢，羟基或氧; n表示1〜3的数。本发明的化合物可用作光致抗蚀剂树脂中的单体，也可用作其制备方法。