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    Photoresist monomers, polymers thereof, and photoresist compositions containing the same
    2.
    发明授权
    Photoresist monomers, polymers thereof, and photoresist compositions containing the same 有权
    光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物

    公开(公告)号：US06235448B1

    公开(公告)日：2001-05-22

    申请号：US09448911

    申请日：1999-11-24

    申请人： Geun Su Lee ,  Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    IPC分类号： G03C172

    CPC分类号： G03F7/0045 ,  G03F7/038 ,  G03F7/265

    摘要： The present invention relates to monomers and polymers prepared therefrom, which are suitable for forming photoresist compositions employed in lithography processes using a deep ultraviolet light source, in particular an ArF light source. According to the present invention, novel monomers represented by Chemical Formula 1, are provided: wherein R represents a C1-C10 alkyl group, and m is the number 1 or 2. as well as copolymers prepared by using said monomers as represented by Chemical Formula 8: wherein R represents a C1-C10 alkyl group; R′ represents H or —COOH; m is the number 1 or 2; n is a number from 1 to 3; and X represents CH2, NH or O; and a, b and c represent the number of repeating of the respective monomers.

    摘要翻译： 本发明涉及由其制备的单体和聚合物，其适用于在使用深紫外光源，特别是ArF光源的光刻工艺中用于形成光刻胶组合物。根据本发明，由化学式1， 提供：其中R表示C1-C10烷基，m是数字1或2.以及通过使用由化学式8表示的所述单体制备的共聚物：其中R表示C1-C10烷基; R'表示H或-COOH; m是数字1或2; n是从1到3的数字; X表示CH 2，NH或O; a，b和c表示各单体的重复次数。

    Semiconductor device using polymer-containing photoresist, and process for manufacturing the same
    6.
    发明授权
    Semiconductor device using polymer-containing photoresist, and process for manufacturing the same 失效
    使用含聚合物的光致抗蚀剂的半导体装置及其制造方法

    公开(公告)号：US06312865B1

    公开(公告)日：2001-11-06

    申请号：US09223510

    申请日：1998-12-30

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    IPC分类号： G03F739

    CPC分类号： C08F232/08 ,  C07C67/347 ,  C07C69/753 ,  C08F222/06

    摘要： The present invention relates to a semiconductor device using a copolymer-containing photoresist, and a process for manufacturing the same. As a norbornene derivative (monomer) having a hydrophilic group is synthesized and introduced to the backbone chain of a polymer, the polymer according to the present invention has excellent etching resistance and heat resistance, which are the characteristic points of alicyclic olefin structure, and provide excellent resolution due to prominent enhancement of adhesiveness resulted from introducing a hydrophilic group (—OH).

    摘要翻译： 本发明涉及使用含共聚物的光致抗蚀剂的半导体器件及其制造方法。 作为具有亲水基团的降冰片烯衍生物（单体）合成并引入到聚合物的主链中，本发明的聚合物具有优异的耐蚀性和耐热性，这是脂环式烯烃结构的特征点，并提供 由于引入亲水基团（-OH）导致的粘附性显着增强，因而具有优异的分辨率。

    Polymer-containing photoresist, and process for manufacturing the same
    7.
    发明授权
    Polymer-containing photoresist, and process for manufacturing the same 有权
    含聚合物的光致抗蚀剂及其制造方法

    公开(公告)号：US06632903B2

    公开(公告)日：2003-10-14

    申请号：US09934369

    申请日：2001-08-21

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    IPC分类号： C08F23200

    CPC分类号： C08F232/08 ,  C07C67/347 ,  C07C69/753 ,  C08F222/06

    摘要： The present invention relates to a semiconductor device using a copolymer-containing photoresist, and a process for manufacturing the same. As a norbornene derivative (monomer) having a hydrophilic group is synthesized and introduced to the backbone chain of a polymer, the polymer according to the present invention has excellent etching resistance and heat resistance, which are the characteristic points of alicyclic olefin structure, and provide excellent resolution due to prominent enhancement of adhesiveness resulted from introducing a hydrophilic group (—OH).

    摘要翻译： 本发明涉及使用含共聚物的光致抗蚀剂的半导体器件及其制造方法。 作为具有亲水基团的降冰片烯衍生物（单体）合成并引入到聚合物的主链中，本发明的聚合物具有优异的耐蚀性和耐热性，这是脂环式烯烃结构的特征点，并提供 由于引入亲水基团（-OH）导致的粘合性的显着增强，优异的分辨率

    Copolymer resin, preparation thereof, and photoresist using the same
    9.
    发明授权
    Copolymer resin, preparation thereof, and photoresist using the same 失效
    共聚物树脂及其制备方法和使用其的光致抗蚀剂

    公开(公告)号：US06372935B1

    公开(公告)日：2002-04-16

    申请号：US09861394

    申请日：2001-05-18

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    IPC分类号： C07C6974

    CPC分类号： C07D309/12 ,  C07C69/013 ,  C07C69/54 ,  C07C69/757 ,  G03F7/0045

    摘要： The present invention relates to a copolymer resin for ultra-shortwave light source such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of norbornyl(meth)acrylate unit to a structure of copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and enhanced adhesive strength due to a hydrophilic functional group in the norbornyl group, and shows excellent resolution of 0.15 Fm in practical experiment of patterning.

    摘要翻译： 本发明涉及用于超短波光源如KrF或ArF的共聚物树脂，其制备方法和包含相同树脂的光致抗蚀剂。 由于将（甲基）丙烯酸降冰片酯单元引入到光致抗蚀剂共聚物的结构中，本发明的共聚物树脂通过常规的自由基聚合容易地制备。 该树脂在193nm波长处具有高透明度，由于降冰片基中的亲水性官能团而提供增强的耐蚀刻性和增强的粘合强度，并且在实际的图案化实验中显示出优异的分辨率为0.15Fm。

    Copolymer resin, preparation thereof, and photoresist using the same
    10.
    发明授权
    Copolymer resin, preparation thereof, and photoresist using the same 有权

    公开(公告)号：US06608158B2

    公开(公告)日：2003-08-19

    申请号：US10055674

    申请日：2002-01-22

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    IPC分类号： C08F3208

    CPC分类号： C08F232/08 ,  C08F222/06 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/115

    摘要： The present invention relates to a copolymer resin for a photoresist used in far ultraviolet ray such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of mono-methyl cis-5-norbonen-endo-2,3-dicarboxylate unit to a structure of norbornene-maleic anhydride copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and settles the problem of offensive odor occurred in the course of copolymer resin synthesis. Further, as the resin composition can be easily controlled due to the molecular structure, the resin can be manufactured in a large scale.