公开(公告)号：US06611005B2

公开(公告)日：2003-08-26

申请号：US09796702

申请日：2001-03-02

申请人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

发明人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

IPC分类号： H01L2912

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/2231 ,  H01S5/32341 ,  H01S2304/04

摘要： The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided, in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III source gas containing indium and a Group V source gas containing nitrogen into the reaction chamber; and mixing the Group III and Group V source gases, supplied into the reaction chamber, with each other, and supplying a rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas onto the upper surface of the substrate.

摘要翻译： 本发明的半导体的制造方法，在依靠金属有机气相外延技术在反应室内设置的基座上保持的基板上生长化合物半导体。 该方法包括以下步骤：将含有铟的III族源气体和含有氮的V族源气体供应到反应室中; 并将供应到反应室中的III族和V族源气体彼此混合，并将作为载气的稀有气体供给到反应室中，以将混合源气体输送到基板的上表面上。

公开(公告)号：US06265287B1

公开(公告)日：2001-07-24

申请号：US09179935

申请日：1998-10-28

申请人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

发明人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

IPC分类号： H01L2120

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/2231 ,  H01S5/32341 ,  H01S2304/04

摘要： The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III source gas containing indium and a Group V source gas containing nitrogen into the reaction chamber; and mixing the Group III and Group V source gases, supplied into the reaction chamber, with each other, and supplying a rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas onto the upper surface of the substrate.

摘要翻译： 本发明的半导体的制造方法根据金属有机气相外延技术，在设置在反应室中的基座保持的基板上生长化合物半导体。 该方法包括以下步骤：将含有铟的III族源气体和含有氮的V族源气体供应到反应室中; 并将供应到反应室中的III族和V族源气体彼此混合，并将作为载气的稀有气体供给到反应室中，以将混合源气体输送到基板的上表面上。