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公开(公告)号:US5032428A
公开(公告)日:1991-07-16
申请号:US512228
申请日:1990-04-20
Applicant: Hiroshi Ogawa , Shinji Saito , Hitoshi Noguchi
Inventor: Hiroshi Ogawa , Shinji Saito , Hitoshi Noguchi
CPC classification number: G11B5/716 , G11B5/71 , Y10S428/90
Abstract: A method for producing a magnetic recording medium is disclosed, comprising coating on a nonmagnetic support a magnetic coating composition for forming a lower magnetic layer and a magnetic coating composition for forming an upper magnetic layer using a wet-on-wet coating method, thereby forming plural magnetic layers, followed by drying, and then conducting heat treatment thereof, wherein the magnetic coating composition for the upper magnetic layer contains ferromagnetic alloy particles are ferromagnetic particles and does not contain a lubricating agent which has polar groups and has a molecular weight of 3000 or less, the magnetic coating composition for the lower magnetic layer contains ferromagnetic iron oxide particles as ferromagnetic particles, a lubricating agent having polar groups and having a molecular weight of 3000 or less, and a curing agent, the lubricating agent as well as the curing agent in the lower magnetic layer being diffused into the upper magnetic layer by the heat treatment.
Abstract translation: 公开了一种制造磁记录介质的方法,其包括在非磁性载体上涂覆用于形成下磁性层的磁性涂料组合物和使用湿式湿式涂布法形成上层磁性层的磁性涂料组合物,由此形成 多个磁性层,然后干燥,然后进行热处理,其中包含铁磁性合金颗粒的上磁性层的磁性涂层组合物是铁磁性颗粒,并且不含有具有极性基团并且分子量为3000的润滑剂 以下的磁性涂料组合物含有作为铁磁性粒子的铁磁性氧化铁粒子,具有极性基团且分子量为3000以下的润滑剂,固化剂,润滑剂以及固化物 下磁性层中的试剂通过该磁性层扩散到上磁性层中 热处理。
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公开(公告)号:US4481464A
公开(公告)日:1984-11-06
申请号:US435437
申请日:1982-10-20
Applicant: Hitoshi Noguchi , Tomoyuki Akiyama , Hideo Akama , Hideo Okara , Hisao Yoshino
Inventor: Hitoshi Noguchi , Tomoyuki Akiyama , Hideo Akama , Hideo Okara , Hisao Yoshino
Abstract: An apparatus is disclosed which can accurately measure time variant non-ideal device impedance without unwanted delays caused by internal filters. A novel scheme is used which reduces both noise and drift so that the measurement of time variant capacitance and conductance can be made with increased precision for accurately determining such semiconductor characteristics as carrier lifetime and trap level.
Abstract translation: 公开了一种可以精确测量时变非理想设备阻抗而不会由内部滤波器引起的不必要的延迟的装置。 使用了一种降低噪声和漂移的新颖方案,使得可以以更高的精度进行时变电容和电导的测量,以准确地确定诸如载流子寿命和陷阱水平的这种半导体特性。
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