公开(公告)号：US20140078440A1

公开(公告)日：2014-03-20

申请号：US14085958

申请日：2013-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideaki SHISHIDO

IPC: G02F1/1343

CPC classification number: H01L27/14603 ,  B82Y30/00 ,  G02F1/133707 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/1345 ,  G02F1/136204 ,  G02F1/13624 ,  G02F2001/133388 ,  G02F2001/133622 ,  G02F2001/13606 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2202/16 ,  G02F2202/36 ,  H01L27/1225 ,  H01L29/78636 ,  H01L29/7869

Abstract: Disclosed is a semiconductor device which consumes low power and has high reliability and tolerance for electrostatic discharge. The semiconductor device includes, over a first substrate, a pixel portion and a driver circuit portion both of which have a thin film transistor having an oxide semiconductor layer. The semiconductor device further possesses a second substrate to which a first counter electrode layer and a second counter electrode layer are provided, and a liquid crystal layer is interposed between the first and second substrates. The first and second counter electrode layers are provided over the pixel portion and the driver circuit portion, respectively, and the second counter electrode layer has the same potential as the first counter electrode layer.

Abstract translation: 公开了一种消耗低功率并具有高静电放电可靠性和耐受性的半导体器件。 半导体器件包括在第一衬底上的像素部分和驱动器电路部分，它们都具有具有氧化物半导体层的薄膜晶体管。 半导体器件还具有设置第一对置电极层和第二对电极层的第二基板，并且在第一和第二基板之间插入液晶层。 第一和第二对电极层分别设置在像素部分和驱动电路部分上，第二对电极层具有与第一对电极层相同的电位。