公开(公告)号：US5155705A

公开(公告)日：1992-10-13

申请号：US746011

申请日：1991-08-13

申请人： Shigeki Goto ,  Yoshiharu Kato

发明人： Shigeki Goto ,  Yoshiharu Kato

IPC分类号： G11C11/401 ,  G11C7/10 ,  G11C7/20 ,  G11C8/04 ,  G11C11/408 ,  G11C11/418

CPC分类号： G11C7/1087 ,  G11C11/418 ,  G11C7/1078 ,  G11C7/20 ,  G11C8/04

摘要： A semiconductor memory device with a flash write function includes word lines and bit lines; memory cells connected between the word lines and the bit lines; and a flash write mode designating unit for designating a flash write mode in accordance with external control signals. The semiconductor memory device further includes an internal address generating unit which is driven during a flash write mode for sequentially generating internal address signals. The semiconductor memory device additionally has a word-line selecting unit for sequentially selecting the word lines in accordance with the internal address signals from the internal address generating unit. A preset data generating unit is further included in the semiconductor memory device for generating preset data. The semiconductor memory device further has a write unit which is driven during the flash write mode for writing data from the preset data generating unit into all of the memory cells connected to the word line selected by the word-line selecting unit, wherein the flash write operation can be effected by using the internal address and without using an external address.

摘要翻译： 具有闪写功能的半导体存储器件包括字线和位线; 连接在字线和位线之间的存储单元; 以及闪存写入模式指定单元，用于根据外部控制信号指定闪存写入模式。 半导体存储器件还包括内部地址产生单元，其在闪速写入模式期间被驱动以顺序地产生内部地址信号。 半导体存储器件还具有字线选择单元，用于根据来自内部地址生成单元的内部地址信号顺序地选择字线。 预置数据生成单元还包括在用于产生预置数据的半导体存储器件中。 半导体存储器件还具有写入单元，该写入单元在闪速写入模式期间被驱动，用于将数据从预设数据生成单元写入连接到由字线选择单元选择的字线的所有存储单元，其中闪存写入 可以通过使用内部地址并且不使用外部地址来实现操作。