CONTROLLER, MEMORY SYSTEM AND OPERATING METHOD OF MEMORY SYSTEM

    公开(公告)号:US20240363189A1

    公开(公告)日:2024-10-31

    申请号:US18471307

    申请日:2023-09-21

    申请人: SK hynix Inc.

    发明人: Young Ook SONG

    摘要: A memory system includes a plurality of memory devices; and a memory controller configured to perform an initial training operation to set a plurality of time codes corresponding to the plurality of memory devices, respectively, receive a plurality of data signals read from the plurality of memory devices, as internal data signals, according to the plurality of time codes, respectively, and adjust the plurality of time codes based on the internal data signals and error pattern maps generated by collecting error location information for the internal data signals.

    RECEIVERS AND SEMICONDUCTOR MEMORY DEVICES INCLUDING THE SAME

    公开(公告)号:US20240347085A1

    公开(公告)日:2024-10-17

    申请号:US18473837

    申请日:2023-09-25

    IPC分类号: G11C7/20 G11C7/10 G11C7/22

    摘要: A receiver includes a buffer configured to generate an internal data signal by comparing a received data signal with a reference voltage, a decision feedback equalizer configured to generate a sampled signal based on a present value of the internal data signal and on a feedback signal, and configured to provide one of the sampled signal or a first logic level as the feedback signal based on a reset control signal, the sampled signal corresponding to a previous value of the internal data signal, a deserializer configured to generate an output data by deserializing the sampled signal, and a reset control circuit configured to generate the reset control signal based on operating information associated with a write operation of the data signal and configured to provide the reset control signal to the decision feedback equalizer.

    DYNAMIC PROGRAMMING TIME FOR A MEMORY DEVICE

    公开(公告)号:US20240221804A1

    公开(公告)日:2024-07-04

    申请号:US18538652

    申请日:2023-12-13

    IPC分类号: G11C7/10 G11C7/20 G11C7/22

    CPC分类号: G11C7/1096 G11C7/20 G11C7/222

    摘要: In some implementations, a memory device may receive a write command indicating data to be programmed. The memory device may determine a programming time, from a first programming time and a second programming time, to be used to program the data, wherein the programming time indicates an amount of time to be associated with programming the data, and wherein the first programming time is associated with a first amount of time and the second programming time is associated with a second amount of time. The memory device may program the data to a memory of the memory device using the programming time.