利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

114 条记录 (耗时 0.027 秒)

    Paper identification counter and paper identification and counting method
    112.
    发明授权
    Paper identification counter and paper identification and counting method 有权
    纸张识别计数器和纸张识别和计数方法

    公开(公告)号：US06782987B1

    公开(公告)日：2004-08-31

    申请号：US09625359

    申请日：2000-07-25

    申请人： Hideo Abe ,  Yoshikazu Takagi ,  Hiroyuki Shimada ,  Makoto Shinkai ,  Takahiro Ogawa

    发明人： Hideo Abe ,  Yoshikazu Takagi ,  Hiroyuki Shimada ,  Makoto Shinkai ,  Takahiro Ogawa

    IPC分类号： G07K700

    CPC分类号： G07D11/0084 ,  B65H2404/5311

    摘要： A paper identification counter comprises a counter body, a hopper which is formed to the counter body and to which papers to be identified and counted are fed, a paper conveyance unit including a conveyance passage along which the papers such as currency notes from the hopper is conveyed one by one in a direction of a short width side of the papers, a paper identification unit disposed on a way of the conveyance passage for identifying and counting the papers; and a stacker in which the papers delivered from the conveyance passage are stacked. The conveyance passage includes a U-shaped curvilinear conveyance region on a way between the hopper and the stacker.

    摘要翻译： 纸识别计数器包括对置体，料斗，其形成在对置主体上并被供给待识别和计数的纸张;纸输送单元，包括输送通道，诸如来自料斗的纸币等纸张沿着该输送通道 在纸张的宽度方向一个接一个地传送的纸张识别单元，设置在输送通道的通路上，用于识别和计数纸张; 以及堆叠器，其中从输送通道输送的纸张堆叠在其中。 输送通道包括在料斗和堆垛机之间的路上的U形曲线输送区域。

    Semiconductor device and method of manufacturing the same
    113.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体器件及其制造方法

    公开(公告)号：US06593634B2

    公开(公告)日：2003-07-15

    申请号：US09834992

    申请日：2001-04-12

    申请人： Tadahiro Ohmi ,  Hiroyuki Shimada

    发明人： Tadahiro Ohmi ,  Hiroyuki Shimada

    IPC分类号： H01L2976

    CPC分类号： H01L21/84 ,  H01L27/12

    摘要： A semiconductor device includes an NMOSFET and a PMOSFET. Each MOSFET includes first and second impurity diffusion layers for forming a source region and a drain region which are formed in a silicon layer of an SOI substrate or the like, a channel region formed between the first and second impurity diffusion layers, a gate insulation layer at least formed on the channel region, and a gate electrode formed on the gate insulation layer. The gate electrode includes a tantalum nitride layer in a region in contact with at least the gate insulation layer. The semiconductor device exhibits high current drive capability and can be manufactured at high yield.

    摘要翻译： 半导体器件包括NMOSFET和PMOSFET。 每个MOSFET包括用于形成在SOI衬底等的硅层中形成的源极区和漏极区的第一和第二杂质扩散层，形成在第一和第二杂质扩散层之间的沟道区，栅极绝缘层 至少形成在沟道区上，以及形成在栅极绝缘层上的栅电极。 栅电极在与至少栅极绝缘层接触的区域中包括氮化钽层。 该半导体器件具有高电流驱动能力并且可以高产率制造。