公开(公告)号：US20140361856A1

公开(公告)日：2014-12-11

申请号：US14298834

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Baker Scott ,  George Maxim

IPC: H03H11/04

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: Embodiments of radio frequency (RF) devices are disclosed having interconnection paths with capacitive structures having improved quality (Q) factors. In one embodiment, an RF device includes an inductor having an inductor terminal and a semiconductor die. The semiconductor die includes one or more active semiconductor devices that include a device contact. The device contact provided by the one or more active semiconductor devices is positioned so as to be vertically aligned directly below the inductor terminal. The inductor terminal and the device contact are electrically connected with an interconnection path that includes a capacitive structure. To prevent or reduce current crowding, the interconnection path is vertically aligned so as to extend directly between the inductor terminal and the device contact. In this manner, the interconnection path electrically connects the inductor terminal and the device contact without degrading the Q factor of the RF device.

Abstract translation: 公开了射频（RF）装置的实施例，其具有具有改进的质量（Q）因素的电容结构的互连路径。 在一个实施例中，RF器件包括具有电感器端子和半导体管芯的电感器。 半导体管芯包括一个或多个包括器件接触的有源半导体器件。 由一个或多个有源半导体器件提供的器件触点被定位成在电感器端子的正下方垂直对齐。 电感器端子和器件触点与包括电容结构的互连路径电连接。 为了防止或减少电流拥挤，互连线路垂直对准，以便直接在电感器端子和器件触点之间延伸。 以这种方式，互连路径将电感器端子和器件接触电连接，而不降低RF器件的Q因子。