公开(公告)号：US08945405B2

公开(公告)日：2015-02-03

申请号：US13868515

申请日：2013-04-23

Applicant: Seagate Technology LLC

Inventor： Vladyslav Alexandrovich Vas'ko ,  Venkateswara Rao Inturi ,  Michael C. Kautzky ,  Zhihong Lu ,  Mark T. Kief ,  Yifan Zhang

IPC: G11B5/11 ,  G11B5/84 ,  G11B5/39

CPC classification number: G11B5/84 ,  G11B5/3912 ,  G11B5/398

Abstract: A magneto-resistive reader includes a first magnetic shield element, a second magnetic shield element and a magneto-resistive sensor stack separating the first magnetic shield element from the second magnetic shield element. The first shield element includes two ferromagnetic anisotropic layers separated by a grain growth suppression layer.

Abstract translation: 磁阻读取器包括第一磁屏蔽元件，第二磁屏蔽元件和将第一磁屏蔽元件与第二磁屏蔽元件分开的磁阻传感器堆叠。 第一屏蔽元件包括由晶粒生长抑制层分开的两个铁磁各向异性层。

公开(公告)号：US20140376346A1

公开(公告)日：2014-12-25

申请号：US14313504

申请日：2014-06-24

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Sarbeswar Sahoo ,  Tong Zhao ,  Michael C. Kautzky

IPC: G11B5/31 ,  G11B5/48

CPC classification number: G11B5/314 ,  G11B5/1272 ,  G11B5/3163 ,  G11B5/4866 ,  G11B5/6088 ,  G11B7/1387 ,  G11B13/08 ,  G11B2005/0021

Abstract: A method including depositing a plasmonic material at a temperature of at least 150° C.; and forming at least a peg of a near field transducer (NFT) from the deposited plasmonic material.

Abstract translation: 一种方法，包括在至少150℃的温度下沉积等离子体激元材料; 以及从沉积的等离子体激元材料形成至少一个近场换能器（NFT）的钉。

公开(公告)号：US08861316B2

公开(公告)日：2014-10-14

申请号：US13718946

申请日：2012-12-18

Applicant: Seagate Technology LLC

Inventor： Huaqing Yin ,  Jianhua Xue ,  Venkateswara Rao Inturi ,  Mark Thomas Kief ,  Michael C. Kautzky

IPC: G11B11/00 ,  G11B5/127

CPC classification number: G11B5/1278 ,  G11B5/3116 ,  Y10T428/115

Abstract: A write pole structure disclosed herein includes a write pole, a trailing shield, and a high magnetic moment (HMM) material layer on a surface of the trailing shield facing the write pole.

Abstract translation: 本文公开的写柱结构包括位于后屏蔽件面对写极的表面上的写极，后屏蔽和高磁矩（HMM）材料层。

公开(公告)号：US08681595B1

公开(公告)日：2014-03-25

申请号：US13795623

申请日：2013-03-12

Applicant: Seagate Technology LLC

Inventor： Xiaoyue Huang ,  Michael C. Kautzky ,  Tong Zhao

IPC: G11B7/135

CPC classification number: G02B6/122 ,  G02B6/02 ,  G11B5/314 ,  G11B5/4866 ,  G11B7/12 ,  G11B7/1206 ,  G11B7/124 ,  G11B2005/0021

Abstract: Waveguides that include a top cladding layer made of a material having an index of refraction n4; a core bilayer structure, the core bilayer structure including a lower index core layer having an index of refraction n3; and a higher index core layer having an index of refraction n1, wherein the higher index core layer includes TiO2 and one or more than one of Nb2O5, CeO2, Ta2O5, ZrO2, HfO2, Y2O3, Sc2O3, MgO, Al2O3 and SiO2, wherein the lower index core layer is adjacent the higher index core layer; a bottom cladding layer made of a material having an index of refraction n2, wherein the waveguide is configured with the higher index core layer of the core bilayer structure adjacent the top cladding layer and the lower index core layer of the core bilayer structure adjacent the bottom cladding layer, and wherein n4 is less than n3 and n1, and n2 is less than n3 and n1.

Abstract translation: 包括由具有折射率n4的材料制成的顶部覆层的波导; 核心双层结构，核心双层结构包括具有折射率n3的较低折射率核心层; 以及具有折射率n1的高折射率芯层，其中所述较高折射率芯层包括TiO 2和Nb 2 O 5，CeO 2，Ta 2 O 5，ZrO 2，HfO 2，Y 2 O 3，Sc 2 O 3，MgO，Al 2 O 3和SiO 2中的一种或多种，​​其中 较低指数核心层与较高指数核心层相邻; 由具有折射率n2的材料制成的底部包层，其中，所述波导配置有与所述顶部包覆层相邻的所述芯层双层结构的较高折射率的核心层和与所述核心双层结构相邻的底部的下部折射率核心层 包层，其中n4小于n3和n1，n2小于n3和n1。