Hall sensors having forced sensing nodes
    121.
    发明授权
    Hall sensors having forced sensing nodes 有权
    霍尔传感器具有强制传感节点

    公开(公告)号:US09024629B2

    公开(公告)日:2015-05-05

    申请号:US13621336

    申请日:2012-09-17

    Inventor: Mario Motz

    CPC classification number: G01R33/075

    Abstract: Embodiments relate to forced spinning Hall sensors. In embodiments, forced Hall sensors can provide reduced residual offset, lower current consumption and improved or complete rejection of nonlinear backbias effects when compared with conventional approaches.

    Abstract translation: 实施例涉及强制旋转霍尔传感器。 在实施例中,与常规方法相比,强制霍尔传感器可以提供减少的残余偏移,更低的电流消耗和非线性反向效应的改进或完全的抑制。

    Method of making thin-wafer current sensors
    122.
    发明授权
    Method of making thin-wafer current sensors 有权
    制造薄片电流传感器的方法

    公开(公告)号:US08679895B2

    公开(公告)日:2014-03-25

    申请号:US13626456

    申请日:2012-09-25

    Abstract: Embodiments relate to IC current sensors fabricated using thin-wafer manufacturing technologies. Such technologies can include processing in which dicing before grinding (DBG) is utilized, which can improve reliability and minimize stress effects. While embodiments utilize face-up mounting, face-down mounting is made possible in other embodiments by via through-contacts. IC current sensor embodiments can present many advantages while minimizing drawbacks often associated with conventional IC current sensors.

    Abstract translation: 实施例涉及使用薄晶片制造技术制造的IC电流传感器。 这些技术可以包括使用研磨之前的切割(DBG)的处理,这可以提高可靠性并使应力效应最小化。 虽然实施例利用面朝上安装,但是在其他实施例中通过通孔通孔可以使面朝下安装成为可能。 IC电流传感器实施例可以呈现许多优点,同时最小化通常与常规IC电流传感器相关联的缺点。

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