摘要:
A semiconductor memory device includes an address buffer for receiving an external address. A row decoder and a column decoder respectively decode a row address and a column address, and respectively generate a word line selecting signal and a bit line selecting signal. A memory cell array has cells. Each cell is activated by a selection of a word line and,a bit line. A redundancy logic cell replaces defect cells in the memory cell array. Latches store defect cell addresses corresponding to the defect cells in the memory cell array. Comparators output repair signals when an address stored in the latches corresponds to the external address. A redundancy controller generates a control signal to intercept signals corresponding to the defect cells in response to a repair signal, and generates another control signal to enable a read/write operation of the redundancy logic cell in place of the defect cells.
摘要:
A semiconductor chip package includes a semiconductor chip having a plurality of contact pads, a plurality of first leads, a plurality of second leads and a housing. Each of the first leads includes an inner lead portion which is electrically coupled to an associated contact pad on the semiconductor chip, and an outer lead portion which extends from the inner lead portion and is exposed outside of the package. The second leads are disposed in an overlapping relationship with the first leads and are electrically insulated from the first leads. The second leads each include an inner lead portion electrically coupled to an associated contact pad on the semiconductor chip and an outer lead portion which extends from the inner lead portion and is exposed outside the package. The housing encapsulates the semiconductor chip and the inner lead portions of the plurality of first and second leads.