Abstract:
A method for processing an image includes inputting an image, generating a first mean luminance value and a second mean luminance value according to a plurality of pixels within a first luminance interval and a second luminance interval of the image, generating a first luminance threshold according to the first mean luminance value, setting a compensation parameter, generating a first compensation luminance value according to the first mean luminance value and the compensation parameter, generating a second compensation luminance value according to the first luminance threshold, the first mean luminance value, the second mean luminance value, and the compensation parameter, and adjusting luminance values of pixels within the a smaller compensation luminance value and a greater compensation luminance value according to the smaller compensation value and a comparison between the first compensation luminance value and the second compensation luminance value.
Abstract:
A food extruder has a base, a housing, a drive assembly, a food reservoir and a piston assembly. The piston assembly has a piston rod, a piston dish, a fastener and a spring. The piston rod slidably extends into the food reservoir and has a rod, and a rack. The rod has an upper and lower end and at least one flat surface formed at one or respectively at two ends of the rod. The rack is formed on the rod between the ends of the rod adjacent to the at least one flat surface. The piston dish is attached to the lower end of the piston rod and has a through hole. The fastener is extends through the through hole in the piston dish and connects to the lower end of the rod. The spring is mounted around the piston rod near the upper end of the rod.
Abstract:
Methods are provided for fabricating field emitters by using laser-induced re-crystallization. A substrate is first provided on which a silicon-containing layer is formed. A plurality of extrusive tips are thereafter formed to be extruded from the surface of the silicon-containing layer by using laser-induced re-crystallization. The methods of the laser-induced re-crystallization include a step of subjecting the overall or partial silicon-containing layer to an energy source, either unpatterned or patterned.
Abstract:
The present invention relates to a method for transferring devices. A sacrificing layer is positioned before the devices are manufactured, and a transition substrate is pasted on the devices. Then, a method for lateral wet etching or a method for lateral wet etching with mechanical stripping is applied for removing or stripping the sacrificing layer so as to separate the devices and a substrate. The separated devices are transferred to the transition substrate so as to meet the requirements for various products and applications.
Abstract:
The present invention relates to a method for transferring devices. A sacrificing layer is positioned before the devices are manufactured, and a transition substrate is pasted on the devices. Then, a method for lateral wet etching or a method for lateral wet etching with mechanical stripping is applied for removing or stripping the sacrificing layer so as to separate the devices and a substrate. The separated devices are transferred to the transition substrate so as to meet the requirements for various products and applications.